SiHA22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Thin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) R x Q on g Low input capacitance (C ) iss Reduced switching and conduction losses G Ultra low gate charge (Q ) g Available Avalanche energy rated (UIS) Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 S D G N-Channel MOSFET APPLICATIONS Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) PRODUCT SUMMARY Lighting V (V) at T max. 650 DS J R max ( ). at 25 C V = 10 V 0.18 - High-Intensity discharge (HID) DS(on) GS Q max. (nC) 86 - Fluorescent ballast lighting g Q (nC) 11 Consumer gs Q (nC) 24 gd - Adaptors Configuration Single - Televisions - Game console Computing - Adaptors - ATX power supply ORDERING INFORMATION Package Thin-Lead TO-220 FULLPAK Lead (Pb)-free SiHA22N60E-E3 Lead (Pb)-free and halogen-free SiHA22N60E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 21 C e Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 13 A C a Pulsed drain current I 56 DM Linear derating factor 0.28 W/C b Single pulse avalanche energy E 367 mJ AS Maximum power dissipation P 35 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dV/dt V/ns d Reverse diode dV/dt 11 c Soldering recommendations (peak temperature) for 10 s 300 C Mounting torque M3 screw 0.6 Nm Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 5.1 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J e. Limited by maximum junction temperature S17-1308-Rev. G, 21-Aug-17 Document Number: 91573 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHA22N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) -3.6 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V /T -0.71 - V temperature coefficient Reference to 25 C, I = 250 A V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 11 A - 0.15 0.18 DS(on) GS D Forward transconductance g V = 8 V, I = 5 A - 6.4 - S fs DS D Dynamic Input capacitance C - 1920 - iss V = 0 V, GS Output capacitance C -9V = 100 V, 0- oss DS f = 1 MHz Reverse transfer capacitance C -6- rss pF Effective output capacitance, energy C -73 - a o(er) related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C - 263 - o(tr) b related Total gate charge Q -57 86 g Gate-source charge Q -1V = 10 V I = 11 A, V = 480 V1- nC gs GS D DS Gate-drain charge Q -24- gd Turn-on delay time t -18 36 d(on) Rise time t -27 54 r V = 380 V, I = 11 A, DD D ns Turn-off delay time t -6699 V = 10 V, R = 4.7 d(off) GS g Fall time t -3570 f Gate input resistance R f = 1 MHz, open drain 0.3 0.77 1.2 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 21 S showing the A G integral reverse Pulsed diode forward current I -- 56 S SM p - n junction diode Diode forward voltage V T = 25 C, I = 11 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 344 - ns rr T = 25 C, I = I = 11 A, J F S Reverse recovery charge Q -5.3 - C rr dI/dt = 100 A/s, V = 25 V R Reverse recovery current I -28 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S17-1308-Rev. G, 21-Aug-17 Document Number: 91573 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000