Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ( )I (A) DS DS(on) D Pb-free TrenchFET Power MOSFETs 0.022 at V = 4.5 V 6.5 Available GS ESD Protected: 3000 V 20 RoHS* 0.030 at V = 2.5 V 5.5 GS COMPLIANT D D TSSOP-8 D D 1 8 * 300 * 300 S S 1 2 7 2 G G 1 2 S S 1 3 6 2 G G 4 5 1 2 T op V i e w Ordering Information: Si6968BEDQ-T1 S S 1 2 Si6968BEDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel N-Channel * Typical value by design ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 20 DS V Gate-Source Voltage V 12 GS T = 25 C 6.5 5.2 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 5.5 3.5 A A I Pulsed Drain Current 30 DM a I 1.5 1.0 Continuous Source Current (Diode Conduction) S T = 25 C 1.5 1.0 A a P W Maximum Power Dissipation D T = 70 C 0.96 0.64 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typ.Max.Unit t 10 s 72 83 a R Maximum Junction-to-Ambient thJA Steady State 100 120 C/W Maximum Junction-to-Foot (Drain) Steady State R 55 70 thJF Notes: a. Surface Mounted on FR4 board, t 10 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72274 www.vishay.com S-81221-Rev. C, 02-Jun-08 1Si6968BEDQ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static Gate Threshold Voltage V V = V , I = 250 A 0.6 1.6 V GS(th) DS GS D I V = 0 V, V = 4.5 V Gate-Body Leakage 200 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 70 C 25 DS GS J b I V 5 V, V = 4.5 V 30 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 6.5 A 0.0165 0.022 GS D b R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 5.5 A 0.023 0.030 GS D b g V = 10 V, I = 6.5 A 30 S Forward Transconductance fs DS D b V I = 1.5 A, V = 0 V 0.71 1.2 V Diode Forward Voltage SD S GS a Dynamic Q Total Gate Charge 12 18 g Q V = 10 V, V = 4.5 V, I = 6.5 A Gate-Source Charge 2.2 nC gs DS GS D Q Gate-Drain Charge 3.6 gd t Turn-On Delay Time 245 365 d(on) t Rise Time V = 10 V, R = 10 330 495 r DD L ns I 1 A, V = 4.5 V, R = 6 t Turn-Off Delay Time D GEN G 860 1300 d(off) Fall Time t 510 765 f Notes: a. For design aid only not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 10000 1000 8 100 6 10 T = 150 C J 4 1 2 T = 25 C J 0.1 0 0.01 0 3 6 9 12 15 18 0369 1 2 15 V - Gate-to-Source Voltage (V) GS V - Gate-to-Source Voltage (V) GS Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage www.vishay.com Document Number: 72274 2 S-81221-Rev. C, 02-Jun-08 I - Gate Current (mA) GSS I - Gate Current (A) GSS