SiHB30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) R x Q 2 on g D PAK (TO-263) Low input capacitance (C ) iss Reduced switching and conduction losses G Ultra low gate charge (Q ) g Avalanche energy rated (UIS) Material categorization: for definitions of compliance D G please see www.vishay.com/doc 99912 S S N-Channel MOSFET APPLICATIONS Server and telecom power supplies PRODUCT SUMMARY Switch mode power supplies (SMPS) V (V) at T max. 650 Power factor correction power supplies (PFC) DS J R max. () at 25 C V = 10 V 0.125 Lighting DS(on) GS Q max. (nC) 130 - High-intensity discharge (HID) g Q (nC) 15 gs - Fluorescent ballast lighting Q (nC) 39 gd - LED lighting Configuration Single Industrial - Welding - Induction heating - Motor drives Battery chargers Renewable energy - Solar (PV inverters) ORDERING INFORMATION 2 Package D PAK (TO-263) SiHB30N60E-GE3 Lead (Pb)-free and halogen-free SiHB30N60ET1-GE3 SiHB30N60ET5-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 29 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 18 A C a Pulsed drain current I 76 DM Linear derating factor 2W/C b Single pulse avalanche energy E 690 mJ AS Maximum power dissipation P 250 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope V = 0 V to 80 % V 70 DS DS dV/dt V/ns d Reverse diode dV/dt 18 c Soldering recommendations (peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 7 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J S17-0965-Rev. H, 26-Jun-17 Document Number: 91453 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHB30N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA C/W Maximum junction-to-case (drain) -0.5 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V /T -0.64 - V temperature coefficient Reference to 25 C, I = 250 A V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2 2.8 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 600 V, V = 0 V, T = 150 C - - 100 DS GS J Drain-source on-state resistance R V = 10 V I = 15 A - 0.104 0.125 DS(on) GS D Forward transconductance g V = 8 V, I = 3 A - 5.4 - S fs DS D Dynamic Input capacitance C - 2600 - iss V = 0 V, GS Output capacitance C -V = 100 V, 138- oss DS f = 1 MHz Reverse transfer capacitance C -3- rss pF Effective output capacitance, energy C -98 - a o(er) related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C - 346 - o(tr) b related Total gate charge Q -85 130 g Gate-source charge Q -1V = 10 V I = 15 A, V = 480 V5- nC gs GS D DS Gate-drain charge Q -39- gd Turn-on delay time t -19 40 d(on) Rise time t -32 65 r V = 380 V, I = 15 A, DD D ns Turn-off delay time t -6395 V = 10 V, R = 4.7 d(off) GS g Fall time t -3675 f Gate input resistance R f = 1 MHz, open drain - 0.63 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 29 S showing the A G integral reverse Pulsed diode forward current I -- 65 S SM p - n junction diode Diode forward voltage V T = 25 C, I = 15 A, V = 0 V - - 1.3 V SD J S GS Body diode reverse recovery time t - 402 605 ns rr T = 25 C, I = I = 15 A, J F S Body diode reverse recovery charge Q -7 15 C rr dI/dt = 100 A/s, V = 20 V R Reverse recovery current I -32 65 A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S17-0965-Rev. H, 26-Jun-17 Document Number: 91453 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000