SiHB35N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES 2 A specific on resistance (m-cm ) reduction of 25 % D 2 D PAK (TO-263) Low figure-of-merit (FOM) R x Q on g Low input capacitance (C ) iss Reduced switching and conduction losses Ultra low gate charge (Q ) g G Avalanche energy rated (UIS) Material categorization: for definitions of compliance D G please see www.vishay.com/doc 99912 S S APPLICATIONS N-Channel MOSFET Power factor correction power supplies (PFC) Hard switching PWM stages Computing PRODUCT SUMMARY - Switch mode power supplies (SMPS) V (V) at T max. 650 Lighting DS J R typ. () at 25 C V = 10 V 0.082 - Light emitting diode (LED) DS(on) GS Q max. (nC) 132 g - High intensity discharge (HID) Q (nC) 22 gs Telecom Q (nC) 46 gd - Server power supplies Configuration Single Renewable energy - Photovoltaic inverters Industrial - Welding - Induction heating - Motor drives - Battery chargers - Uniterruptable power supplies ORDERING INFORMATION 2 Package D PAK (TO-263) SiHB35N60E-GE3 Lead (Pb)-free and halogen-free SiHB35N60ET1-GE3 SiHB35N60ET5-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 32 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 20 A C a Pulsed drain current I 80 DM Linear derating factor 2W/C b Single pulse avalanche energy E 691 mJ AS Maximum power dissipation P 250 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 57 J dV/dt V/ns d Reverse diode dV/dt 31 c Soldering recommendations (peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 7 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J S20-0272-Rev. B, 20-Apr-2020 Document Number: 91581 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiHB35N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA C/W Maximum junction-to-case (drain) R -0.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.70 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 25 DS GS J Drain-source on-state resistance R V = 10 V I = 17 A - 0.082 0.094 DS(on) GS D Forward transconductance g V = 30 V, I = 17 A - 13 - S fs DS D Dynamic Input capacitance C - 2760 - iss V = 0 V, GS Output capacitance C -V = 100 V, 118- oss DS f = 1 MHz Reverse transfer capacitance C -5- rss pF Effective output capacitance, energy C - 118 - o(er) a related V = 0 V to 480 V, V = 0 V DS GS b Effective output capacitance, time related C - 429 - o(tr) Total gate charge Q -88 132 g Gate-source charge Q -2V = 10 V I = 17 A, V = 480 V2- nC gs GS D DS Gate-drain charge Q -46- gd Turn-on delay time t -29 58 d(on) Rise time t -61 92 r V = 480 V, I = 17 A, DD D ns V = 10 V, R = 9.1 Turn-off delay time t -7GS g 8117 d(off) Fall time t -3264 f Gate input resistance R f = 1 MHz, open drain 0.25 0.5 1 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 32 S showing the A integral reverse G p - n junction diode Pulsed diode forward current I -- 80 S SM Diode forward voltage V T = 25 C, I = 17 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse recovery time t - 455 910 ns rr T = 25 C, I = I = 17 A, J F S Reverse recovery charge Q - 8 16 C rr dI/dt = 100 A/s, V = 25 V R Reverse recovery current I -30 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S20-0272-Rev. B, 20-Apr-2020 Document Number: 91581 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000