6.15 mm SiDR626DP www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PowerPAK SO-8DC TrenchFET Gen IV power MOSFET D D 8 D 7 Very low R - Q figure-of-merit (FOM) DS g D 6 5 Tuned for the lowest R - Q FOM DS oss S 100 % R and UIS tested g Top side cooling feature provides 1 2 additional venue for thermal transfer S 3 1 S 4 S Material categorization: for definitions of compliance G please see www.vishay.com/doc 99912 Top View Bottom View APPLICATIONS D PRODUCT SUMMARY Synchronous rectification V (V) 60 DS R max. () at V = 10 V 0.0017 Primary side switch DS(on) GS R max. () at V = 7.5 V 0.0020 DC/DC converter DS(on) GS G R max. () at V = 6 V 0.0026 DS(on) GS Solar micro inverter Q typ. (nC) 52 g Motor drive switch a, g N-Channel MOSFET I (A) 100 D Battery and load switch Configuration Single S Industrial ORDERING INFORMATION Package PowerPAK SO-8DC Lead (Pb)-free and halogen-free SiDR626DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 60 DS V Gate-source voltage V 20 GS a T = 25 C 100 C a T = 70 C 100 C Continuous drain current (T = 150 C) I J D b, c T = 25 C 42.8 A b, c T = 70 C 34.2 A A Pulsed drain current (t = 100 s) I 200 DM a T = 25 C 100 C Continuous source-drain diode current I S b, c T = 25 C 5.6 A Single pulse avalanche current I 50 AS L = 0.1 mH Single pulse avalanche energy E 125 mJ AS T = 25 C 125 C T = 70 C 80 C Maximum power dissipation P W D b, c T = 25 C 6.25 A b, c T = 70 C 4 A Operating junction and storage temperature range T , T -55 to +150 J stg C c Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b Maximum junction-to-ambient t 10 s R 15 20 thJA Maximum junction-to-case (drain) Steady state R 0.8 1 C/W thJC Maximum junction-to-case (source) Steady state R 1.1 1.4 thJC Notes a. Package limited b. Surface mounted on 1 x 1 FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 54 C/W g. T = 25 C C S17-1056-Rev. A, 10-Jul-17 Document Number: 75748 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.15 mmSiDR626DP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 60 - - V DS GS D V temperature coefficient V /T I = 10 mA - 35 - DS DS J D mV/C V temperature coefficient V /T I = 250 A - -7.4 - GS(th) GS(th) J D Gate-source threshold voltage V V = V , I = 250 A 2 - 3.4 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 60 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 60 V, V = 0 V, T = 70 C - - 15 DS GS J a On-state drain current I V 10 V, V = 10 V 40 - - A D(on) DS GS V = 10 V, I = 20 A - 0.0014 0.0017 GS D a Drain-source on-state resistance R V = 7.5 V, I = 20 A - 0.0016 0.0020 DS(on) GS D V = 6 V, I = 10 A - 0.0020 0.0026 GS D a Forward transconductance g V = 15 V, I = 20 A - 78 - S fs DS D b Dynamic Input capacitance C - 5130 - iss Output capacitance C V = 30 V, V = 0 V, f = 1 MHz - 992 - pF oss DS GS Reverse transfer capacitance C -94 - rss V = 30 V, V = 10 V, I = 10 A - 68 102 DS GS D Total gate charge Q g -52 78 Gate-source charge Q V = 30 V, V = 7.5 V, I = 10 A -21 - nC gs DS GS D Gate-drain charge Q -8.2 - gd Output charge Q V = 30 V, V = 0 V - 68 - oss DS GS Gate resistance R f = 1 MHz 0.3 0.91 1.6 g Turn-on delay time t -16 32 d(on) Rise time t -24 48 r V = 30 V, R = 3 , I 10 A, DD L D V = 10 V, R = 1 Turn-off delay time t GEN g -30 60 d(off) Fall time t -11 22 f ns Turn-on delay time t -19 38 d(on) Rise time t -25 50 V = 30 V, R = 3 , I 10 A, r DD L D V = 7.5 V, R = 1 Turn-off delay time t GEN g -27 54 d(off) Fall time t -12 24 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - 100 S C A Pulse diode forward current I - - 200 SM Body diode voltage V I = 5 A, V = 0 V - 0.72 1.1 V SD S GS Body diode reverse recovery time t - 54 108 ns rr Body diode reverse recovery charge Q - 64 128 nC rr I = 10 A, di/dt = 100 A/s, T = 25 C F J Reverse recovery fall time t -35 - a ns Reverse recovery rise time t -29 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1056-Rev. A, 10-Jul-17 Document Number: 75748 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000