1.6 mm Si8481DB www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES MICRO FOOT 1.6 x 1.6 TrenchFET Gen III p-channel power MOSFET D 2 Low 0.6 mm maximum height D 3 Low on-resistance Material categorization: for definitions of compliance please see 1 www.vishay.com/doc 99912 G 4 1 S APPLICATIONS Backside View Bump Side View S Load switch PRODUCT SUMMARY - With low voltage drop V (V) -20 DS G Power management in battery- R max. ( ) at V = -4.5 V 0.021 DS(on) GS operated, mobile, and wearable R max. ( ) at V = -2.5 V 0.025 DS(on) GS devices R max. ( ) at V = -1.8 V 0.039 DS(on) GS P-Channel MOSFET Q typ. (nC) 31.2 g a I (A) -9.7 D D Configuration Single ORDERING INFORMATION Package MICRO FOOT Lead (Pb)-free and halogen-free Si8481DB-T1-E1 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -20 DS V Gate-source voltage V 8 GS a T = 25 C -9.7 A a T = 70 C -7.8 A Continuous drain current (T = 150 C) I J D b T = 25 C -6.2 A b T = 70 C -5 A A Pulsed drain current (t = 100 s) I -30 DM a T = 25 C -2.3 A Continuous source-drain diode current I S b T = 70 C -0.92 A a T = 25 C 2.8 A a T = 70 C 1.8 A Maximum power dissipation P W D b T = 25 C 1.1 A b T = 70 C 0.73 A Operating junction and storage temperature range T , T -55 to +150 J stg VPR C c Package reflow conditions 260 IR / convection THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT a, f Maximum junction-to-ambient 35 45 t 5 s R C/W thJA b, g Maximum junction-to-ambient 85 110 Notes a. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s. b. Surface mounted on 1 x 1 FR4 board with minimum copper, t = 5 s. c. Refer to IPC / JEDEC (J-STD-020), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on T = 25 C. A f. Maximum under steady state conditions is 85 C/W. g. Maximum under steady state conditions is 175 C/W. S16-2380-Rev. A, 21-Nov-16 Document Number: 75264 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 xxxx xxx 1.6 mmSi8481DB www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -20 - - V DS GS D V temperature coefficient V /T --13 - DS DS J I = -250 A mV/C D V temperature coefficient V /T -2.5 - GS(th) GS(th) J Gate-source threshold voltage V V = V , I = -250 A -0.4 - -0.9 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 8 V - - 100 nA GSS DS GS V = -20 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I A DSS V = -20 V, V = 0 V, T = 55 C - - -10 DS GS J a On-state drain current I V -5 V, V = -4.5 V -5 - - A D(on) DS GS V = -4.5 V, I = -3 A - 0.017 0.021 GS D a Drain-source on-state resistance R V = -2.5 V, I = -3 A - 0.020 0.025 DS(on) GS D V = -1.8 V, I = -1 A - 0.026 0.039 GS D a Forward transconductance g V = -5 V, I = -3 A - 22 - S fs DS D b Dynamic Input capacitance C - 2500 - iss Output capacitance C V = -10 V, V = 0 V, f = 1 MHz - 320 - pF oss DS GS Reverse transfer capacitance C - 260 - rss V = -10 V, V = -8 V, I = -3 A - 54 81 DS GS D Total gate charge Q g V = -10 V, V = -4.5 V, I = -3 A - 31.2 47 DS GS D nC Gate-source charge Q -2.7 - gs V = -10 V, V = -4.5 V, I = -3 A DS GS D Gate-drain charge Q -6.3 - gd Gate resistance R f = 1 MHz - 17 - g Turn-on delay time t -16 30 d(on) Rise time t -25 50 r V = -10 V, R = 3.3 , I -3 A, DD L D V = -4.5 V, R = 1 Turn-off delay time t GEN g - 300 600 d(off) Fall time t - 110 220 f ns Turn-on delay time t -7 15 d(on) Rise time t -20 40 r V = -10 V, R = 3.3 , I -3 A, DD L D V = -8 V, R = 1 Turn-off delay time t GEN g - 400 800 d(off) Fall time t - 110 220 f Drain-Source Body Diode Characteristics c Continuous source-drain diode current I T = 25 C - - -2.3 S A A Pulse diode forward current I -- -15 SM Body diode voltage V I = -3 A, V = 0 V - -0.8 -1.2 V SD S GS Body diode reverse recovery time t - 150 300 ns rr Body diode reverse recovery charge Q - 235 470 nC rr I = -3 A, dI/dt = 100 A/s, T = 25 C F J Reverse recovery fall time t -47 - a ns Reverse recovery rise time t - 103 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-2380-Rev. A, 21-Nov-16 Document Number: 75264 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000