1 mm Si8483DB www.vishay.com Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET e V (V) R () (MAX.) I (A) Q (TYP.) DS DS(on) D g Ultra-small 1.5 mm x 1 mm maximum outline 0.026 at V = -4.5 V -16 GS Ultra-thin 0.59 mm maximum height 0.035 at V = -2.5 V -16 GS -12 21 nC 0.055 at V = -1.8 V -13 Material categorization: GS for definitions of compliance please see 0.092 at V = -1.5 V -2.5 GS www.vishay.com/doc 99912 MICRO FOOT 1.5 x 1 S APPLICATIONS 2 S S Load switch for smart 3 D 4 phones, tablet PCs, and mobile computing G 1 - Low voltage drop G 6 - Low power consumption S 5 - Increased battery life 1 D Backside View Bump Side View Marking Code: xxxx = 8483 D xxx = Date / lot traceability code P-Channel MOSFET Ordering Information: Si8483DB-T2-E1 (Lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V -12 DS V Gate-Source Voltage V 10 GS T = 25 C -16 C T = 70 C -15 C = 150 C) Continuous Drain Current (T I J D a, b T = 25 C -8.7 A a, b T = 70 C -7 A A Pulsed Drain Current I -25 DM T = 25 C -10.8 C Continuous Source-Drain Diode Current I S a, b T = 25 C -2.3 A T = 25 C 13 C T = 70 C 8.4 C Maximum Power Dissipation P W D a, b T = 25 C 2.77 A a, b T = 70 C 1.77 A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C c Package Reflow Conditions IR/Convection 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT a, f Maximum Junction-to-Ambient R 37 45 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 79.5 thJC Notes a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. d. Case is defined as the top surface of the package. e. Based on T = 25 C. C f. Maximum under steady state conditions is 85 C/W. S15-0932-Rev. C, 20-Apr-15 Document Number: 63553 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 xxxx xxx 1.5 mmSi8483DB www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = -250 A -12 - - V DS GS D V Temperature Coefficient V /T --7- DS DS J I = -250 A mV/C D V Temperature Coefficient V /T -2.8 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = -250 A -0.4 - -0.8 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 10 V - - 100 nA GSS DS GS V = -12 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -12 V, V = 0 V, T = 70 C - - -10 DS GS J a On-State Drain Current I V -5 V, V = -4.5 V -5 - - A D(on) DS GS V = -4.5 V, I = -1.5 A - 0.022 0.026 GS D V = -2.5 V, I = -1.5 A - 0.028 0.035 GS D a Drain-Source On-State Resistance R DS(on) V = -1.8 V, I = -1 A - 0.040 0.055 GS D V = -1.5 V, I = -0.5 A - 0.056 0.092 GS D a Forward Transconductance g V = -6 V, I = -1.5 A - 10 - S fs DS D b Dynamic Input Capacitance C - 1840 - iss Output Capacitance C V = -6 V, V = 0 V, f = 1 MHz - 410 - pF oss DS GS Reverse Transfer Capacitance C - 380 - rss V = -6 V, V = -10 V, I = -1.5 A - 43 65 DS GS D Total Gate Charge Q g -21 32 nC Gate-Source Charge Q V = -6 V, V = -4.5 V, I = -1.5 A -2.1 - gs DS GS D Gate-Drain Charge Q -4.8- gd Gate Resistance R V = -0.1 V, f = 1 MHz - 2.2 - g GS Turn-On Delay Time t -20 40 d(on) Rise Time t -25 50 V = -6 V, R = 4 r DD L I -1.5 A, V = -4.5 V, R = 1 Turn-Off Delay Time t -4D GEN g 080 d(off) Fall Time t -10 20 f ns Turn-On Delay Time t -10 20 d(on) Rise Time t -10 20 V = -6 V, R = 4 r DD L I -1.5 A, V = -10V, R = 1 Turn-Off Delay Time t -4D GEN g 080 d(off) Fall Time t -10 20 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode I T = 25 C - - -10.8 S C Current A Pulse Diode Forward Current I -- -25 SM Body Diode Voltage V I = -1.5 A, V = 0 - -0.8 -1.2 V SD S GS Body Diode Reverse Recovery Time t -30 60 ns rr Body Diode Reverse Recovery Charge Q -12 25 nC rr I = -1.5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t - 11.5 - a ns Reverse Recovery Rise Time t - 18.5 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-0932-Rev. C, 20-Apr-15 Document Number: 63553 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000