X-On Electronics has gained recognition as a prominent supplier of SI7998DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7998DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7998DP-T1-GE3 Vishay

SI7998DP-T1-GE3 electronic component of Vishay
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Part No.SI7998DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 25/30A 93/53mohm @ 10V
Datasheet: SI7998DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.4014 ea
Line Total: USD 4.4 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.9991
10 : USD 1.7237
100 : USD 1.3437
500 : USD 1.1101
1000 : USD 0.8763

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.9991
10 : USD 1.7237
100 : USD 1.3437
500 : USD 1.1101
1000 : USD 0.8763

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.852

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 4.4014
10 : USD 1.5642
100 : USD 1.2427
250 : USD 1.2117
500 : USD 0.9963
1000 : USD 0.8109
3000 : USD 0.7861

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.8364

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 10
Multiples : 1
10 : USD 2.0193

   
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We are delighted to provide the SI7998DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7998DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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6.15 mm Si7998DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET a V (V) R ()I (A) Q (TYP.) DS DS(on) D g PWM optimized 0.0093 at V = 10 V 25 GS Channel-1 30 8.2 nC 100 % UIS tested 0.0124 at V = 4.5 V 25 GS Material categorization: 0.0053 at V = 10 V 30 GS Channel-2 30 15.3 nC for definitions of compliance please see 0.0070 at V = 4.5 V 30 GS www.vishay.com/doc 99912 PowerPAK SO-8 Dual D APPLICATIONS 1 D 1 8 D 2 7 System Power DC/DC D 2 6 5 D D 1 2 1 2 S 1 3 G 1 1 44 S 2 G G 1 2 G 2 Top View Bottom View Ordering Information: N-Channel MOSFET N-Channel MOSFET S S 1 2 Si7998DP-T1-GE3 (Lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL CHANNEL-1CHANNEL-2UNIT Drain-Source Voltage V 30 30 DS V Gate-Source Voltage V 20 20 GS a a T = 25 C 25 30 C a a T = 70 C 25 30 C Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C 15 21 A b, c b, c T = 70 C 12 17 A A Pulsed Drain Current I 60 80 DM a T = 25 C 19 30 C Source-Drain Current Diode Current I S b, c b, c T = 25 C 3 3.3 A Single Pulse Avalanche Current I 25 40 AS L = 0.1 mH Single Pulse Avalanche Energy E 31 80 mJ AS T = 25 C 22 40 C T = 70 C 14 25 C Maximum Power Dissipation P W D b, c b, c T = 25 C 3.6 4 A b, c b, c T = 70 C 2.3 2.5 A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS CHANNEL-1 CHANNEL-2 PARAMETER SYMBOL UNIT TYP. MAX. TYP. MAX. b, f Maximum Junction-to-Ambient t 10 s R 26 35 22 31 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 4 5.5 2.2 3.1 thJC Notes a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions for channel-1 and channel-2 is 80 C/W. S14-1941-Rev. C, 29-Sep-14 Document Number: 68970 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.15 mmSi7998DP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.MAX.UNIT Static Ch-1 30 - - Drain-Source Breakdown Voltage V V = 0 V, I = 250 A V DS GS D Ch-2 30 - - Ch-1 - 28 - V Temperature Coefficient V /T I = 250 A DS DS J D Ch-2 - 26 - mV/C Ch-1 - -5.6 - V Temperature Coefficient V /T I = 250 A GS(th) GS(th) J D Ch-2 - -6 - Ch-1 1.2 - 2.5 Gate Threshold Voltage V V = V , I = 250 A V GS(th) DS GS D Ch-2 1.2 - 2.5 Ch-1 - - 100 Gate-Body Leakage I V = 0 V, V = 20 V nA GSS DS GS Ch-2 - - 100 Ch-1 - - 1 V = 30 V, V = 0 V DS GS Ch-2 - - 1 Zero Gate Voltage Drain Current I A DSS Ch-1 - - 10 V = 30 V, V = 0 V, T = 85 C DS GS J Ch-2 - - 10 Ch-1 30 - - b On-State Drain Current I V 5 V, V = 10 V A D(on) DS GS Ch-2 30 - - V = 10 V, I = 15 A Ch-1 - 0.0076 0.0093 GS D V = 10 V, I = 20 A Ch-2 - 0.0044 0.0053 GS D b Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 13 A Ch-1 - 0.0103 0.0124 GS D V = 4.5 V, I = 18 A Ch-2 - 0.0058 0.0070 GS D V = 10 V, I = 15 A Ch-1 - 45 - DS D b Forward Transconductance g S fs V = 10 V, I = 20 A Ch-2 - 71 - DS D a Dynamic Ch-1 - 1100 - Input Capacitance C iss Ch-2 - 2000 - Channel-1 V = 15 V, V = 0 V, f = 1 MHz DS GS Ch-1 - 200 - Output Capacitance C pF oss Ch-2 - 390 - Channel-2 V = 15 V, V = 0 V, f = 1 MHz DS GS Ch-1 - 90 - Reverse Transfer Capacitance C rss Ch-2 - 160 - V = 15 V, V = 10 V, I = 15 A Ch-1 - 17 26 DS GS D V = 15 V, V = 10 V, I = 20 A Ch-2 - 32 48 DS GS D Total Gate Charge Q g Ch-1 - 8.2 13 Ch-2 - 15.3 23 Channel-1 nC V = 15 V, V = 4.5 V, I = 15 A DS GS D Ch-1 - 3.2 - Gate-Source Charge Q gs Ch-2 - 6.3 - Channel-2 V = 15 V, V = 4.5 V, I = 20 A DS GS D Ch-1 - 2.7 - Gate-Drain Charge Q gd Ch-2 - 4.7 - Ch-1 - 3.5 7 Gate Resistance R f = 1 MHz W g Ch-2 - 3.5 7 S14-1941-Rev. C, 29-Sep-14 Document Number: 68970 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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