6.15 mm Si7998DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET a V (V) R ()I (A) Q (TYP.) DS DS(on) D g PWM optimized 0.0093 at V = 10 V 25 GS Channel-1 30 8.2 nC 100 % UIS tested 0.0124 at V = 4.5 V 25 GS Material categorization: 0.0053 at V = 10 V 30 GS Channel-2 30 15.3 nC for definitions of compliance please see 0.0070 at V = 4.5 V 30 GS www.vishay.com/doc 99912 PowerPAK SO-8 Dual D APPLICATIONS 1 D 1 8 D 2 7 System Power DC/DC D 2 6 5 D D 1 2 1 2 S 1 3 G 1 1 44 S 2 G G 1 2 G 2 Top View Bottom View Ordering Information: N-Channel MOSFET N-Channel MOSFET S S 1 2 Si7998DP-T1-GE3 (Lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL CHANNEL-1CHANNEL-2UNIT Drain-Source Voltage V 30 30 DS V Gate-Source Voltage V 20 20 GS a a T = 25 C 25 30 C a a T = 70 C 25 30 C Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C 15 21 A b, c b, c T = 70 C 12 17 A A Pulsed Drain Current I 60 80 DM a T = 25 C 19 30 C Source-Drain Current Diode Current I S b, c b, c T = 25 C 3 3.3 A Single Pulse Avalanche Current I 25 40 AS L = 0.1 mH Single Pulse Avalanche Energy E 31 80 mJ AS T = 25 C 22 40 C T = 70 C 14 25 C Maximum Power Dissipation P W D b, c b, c T = 25 C 3.6 4 A b, c b, c T = 70 C 2.3 2.5 A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS CHANNEL-1 CHANNEL-2 PARAMETER SYMBOL UNIT TYP. MAX. TYP. MAX. b, f Maximum Junction-to-Ambient t 10 s R 26 35 22 31 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 4 5.5 2.2 3.1 thJC Notes a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions for channel-1 and channel-2 is 80 C/W. S14-1941-Rev. C, 29-Sep-14 Document Number: 68970 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.15 mmSi7998DP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.MAX.UNIT Static Ch-1 30 - - Drain-Source Breakdown Voltage V V = 0 V, I = 250 A V DS GS D Ch-2 30 - - Ch-1 - 28 - V Temperature Coefficient V /T I = 250 A DS DS J D Ch-2 - 26 - mV/C Ch-1 - -5.6 - V Temperature Coefficient V /T I = 250 A GS(th) GS(th) J D Ch-2 - -6 - Ch-1 1.2 - 2.5 Gate Threshold Voltage V V = V , I = 250 A V GS(th) DS GS D Ch-2 1.2 - 2.5 Ch-1 - - 100 Gate-Body Leakage I V = 0 V, V = 20 V nA GSS DS GS Ch-2 - - 100 Ch-1 - - 1 V = 30 V, V = 0 V DS GS Ch-2 - - 1 Zero Gate Voltage Drain Current I A DSS Ch-1 - - 10 V = 30 V, V = 0 V, T = 85 C DS GS J Ch-2 - - 10 Ch-1 30 - - b On-State Drain Current I V 5 V, V = 10 V A D(on) DS GS Ch-2 30 - - V = 10 V, I = 15 A Ch-1 - 0.0076 0.0093 GS D V = 10 V, I = 20 A Ch-2 - 0.0044 0.0053 GS D b Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 13 A Ch-1 - 0.0103 0.0124 GS D V = 4.5 V, I = 18 A Ch-2 - 0.0058 0.0070 GS D V = 10 V, I = 15 A Ch-1 - 45 - DS D b Forward Transconductance g S fs V = 10 V, I = 20 A Ch-2 - 71 - DS D a Dynamic Ch-1 - 1100 - Input Capacitance C iss Ch-2 - 2000 - Channel-1 V = 15 V, V = 0 V, f = 1 MHz DS GS Ch-1 - 200 - Output Capacitance C pF oss Ch-2 - 390 - Channel-2 V = 15 V, V = 0 V, f = 1 MHz DS GS Ch-1 - 90 - Reverse Transfer Capacitance C rss Ch-2 - 160 - V = 15 V, V = 10 V, I = 15 A Ch-1 - 17 26 DS GS D V = 15 V, V = 10 V, I = 20 A Ch-2 - 32 48 DS GS D Total Gate Charge Q g Ch-1 - 8.2 13 Ch-2 - 15.3 23 Channel-1 nC V = 15 V, V = 4.5 V, I = 15 A DS GS D Ch-1 - 3.2 - Gate-Source Charge Q gs Ch-2 - 6.3 - Channel-2 V = 15 V, V = 4.5 V, I = 20 A DS GS D Ch-1 - 2.7 - Gate-Drain Charge Q gd Ch-2 - 4.7 - Ch-1 - 3.5 7 Gate Resistance R f = 1 MHz W g Ch-2 - 3.5 7 S14-1941-Rev. C, 29-Sep-14 Document Number: 68970 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000