New Product Si7938DP Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0058 at V = 10 V 60 TrenchFET Power MOSFET GS 40 21 nC 100 % R Tested 0.007 at V = 4.5 V g 60 GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS POL DC/DC S1 D D 1 2 5.15 mm 6.15 mm 1 G1 2 S2 3 G2 4 D1 8 G G D1 1 2 7 D2 6 D2 5 S S 1 2 Bottom View N-Channel MOSFET N-Channel MOSFET Ordering Information: Si7938DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 40 DS V Gate-Source Voltage V 20 GS a T = 25 C 60 C a T = 85 C C 60 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 18.5 b, c T = 85 C 14.8 A A Pulsed Drain Current I 80 DM T = 25 C 38 C Continuous Source-Drain Diode Current I S b, c T = 25 C A 2.9 Avalanche Current I 42 AS L = 0.1 mH Single-Pulse Avalanche Energy E 88.2 mJ AS T = 25 C 46 C T = 85 C 29 C Maximum Power Dissipation P W D b, c T = 25 C A 3.5 b, c T = 85 C 2.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 26 35 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 2.2 2.7 thJC Notes: a. Package limited b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 85 C/W. Document Number: 65365 www.vishay.com S09-1923-Rev. A, 28-Sep-09 1New Product Si7938DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 40 V DS GS D V /T V Temperature Coefficient 45 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5.5 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 12.5V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 40 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 20 A D(on) DS GS V = 10 V, I = 18.5 A 0.0048 0.0058 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 16.8 A 0.0056 0.007 GS D a g V = 20 V, I = 18.5 A Forward Transconductance 105 S fs DS D b Dynamic Input Capacitance C 2300 iss C V = 20 V, V = 0 V, f = 1 MHz Output Capacitance 340 pF oss DS GS Reverse Transfer Capacitance C 140 rss V = 20 V, V = 10 V, I = 18.5 A 43 65 DS GS D Q Total Gate Charge g 21 32 nC Gate-Source Charge Q 6.2 V = 20 V, V = 4.5 V, I = 18.5 A gs DS GS D Q Gate-Drain Charge 6.5 gd Gate Resistance R f = 1 MHz 0.5 2.5 5 g t Turn-On Delay Time 25 40 d(on) t Rise Time V = 20 V, R = 2 19 30 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 40 60 d(off) t Fall Time 15 25 f ns t Turn-On Delay Time 11 25 d(on) t Rise Time V = 20 V, R = 2 10 15 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 33 50 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 60 S C A I Pulse Diode Forward Current 80 SM Body Diode Voltage V I = 10 A, V = 0 V 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 30 60 ns rr Body Diode Reverse Recovery Charge Q 30 50 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 18 a ns Reverse Recovery Rise Time t 12 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65365 2 S09-1923-Rev. A, 28-Sep-09