Si7862ADP Vishay Siliconix N-Channel 16-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free available V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFETS: 2.5 V Rated RoHS 0.003 at V = 4.5 V 29 GS Low 3.3 m R COMPLIANT DS(on) 16 54 0.0055 at V = 2.5 V 23 GS Low Gate Resistance 100 % R Tested g APPLICATIONS PowerP AK SO-8 Synchronous Rectification Low Output Voltage Synchronous Rectification S 6.15 mm 5.15 mm 1 S 2 S 3 D G 4 D 8 D 7 D 6 G D 5 Bottom View S Ordering Information: Si7862ADP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si7862ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 16 DS V Gate-Source Voltage V 8 GS T = 25 C 29 18 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 23 14 A A Pulsed Drain Current (10 s Pulse Width) I 60 DM a I 4.5 1.6 Continuous Source Current (Diode Conduction) S T = 25 C 5.4 1.9 A a P W Maximum Power Dissipation D T = 70 C 3.4 1.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 18 23 a R Maximum Junction-to-Ambient thJA Steady State C/W 50 65 R Maximum Junction-to-Case (Drain) Steady State 1.0 1.5 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (Si7862ADP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.6 2.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = 16 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 16 V, V = 0 V, T = 55C 5 DS GS J a I V 5 V, V = 4.5 V 30 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 29 A 0.0024 0.003 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 23 A 0.0045 0.0055 GS D a g V = 6 V, I = 29 A 140 S Forward Transconductance fs DS D a V I = 4.5 A, V = 0 V 0.75 1.2 V Diode Forward Voltage SD S GS b Dynamic C Input Capacitance 7340 iss Output Capacitance C V = 8 V, V = 0 V, f = 1 MHz 2180 pF oss DS SS C Reverse Transfer Capacitance 945 rss Total Gate Charge Q 54 80 g Q V = 6 V, V = 4.5 V, I = 29 A Gate-Source Charge 11.5 nC gs DS GS D Gate-Drain Charge Q 12.5 gd R Gate Resistance 0.5 1.1 1.8 g Turn-On Delay Time t 42 60 d(on) t Rise Time V = 6 V, R = 6 38 60 r DD L 1 A, V = 4.5 V, R = 6 t I Turn-Off Delay Time D GEN G 120 180 ns d(off) t Fall Time 50 75 f t I = 2.9 A, di/dt = 100 A/s Source-Drain Reverse Recovery Time 80 120 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 60 V =5thru2.5 V GS 50 50 40 40 30 30 T = 125 C C 20 20 2V 25 C 10 10 -55C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 1234 5 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) GS DS Transfer Characteristics Output Characteristics www.vishay.com Document Number: 73165 2 S-80438-Rev. C, 03-Mar-08 I - Drain Current (A) D I - Drain Current (A) D