Si7818DN www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY PWM-optimized TrenchFET power MOSFET V (V) R ()I (A) Q (TYP.) DS DS(on) D g 100 % R tested g 0.135 at V = 10 V 3.4 GS 150 20 nC Avalanche tested 0.142 at V = 6 V 3.3 GS Material categorization: for definitions of compliance please see Available www.vishay.com/doc 99912 APPLICATIONS Primary side switching circuits D G Ordering Information: S Si7818DN-T1-E3 (lead (Pb)-free) Si7818DN-T1-GE3 (lead (Pb)-free and halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL 10 s STEADY STATE UNIT Drain-Source Voltage V 150 DS V Gate-Source Voltage V 20 GS T = 25 C 3.4 2.2 A a Continuous Drain Current (T = 150 C) I J D T = 70 C 2.7 1.7 A Pulsed Drain Current I 10 A DM a Continuous Source Current (Diode Conduction) I 3.2 1.3 S Single Avalanche Current I 9 AS L = 0.1 mH Single Avalanche Energy E 4mJ AS T = 25 C 3.8 1.5 A a Maximum Power Dissipation P W D T = 70 C 2 0.8 A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C b, c Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t 10 s 26 33 a Maximum Junction-to-Ambient R thJA Steady State 65 81 C/W Maximum Junction-to-Case (Drain) Steady State R 1.9 2.4 thJC Notes a. Surface mounted on 1 x 1 FR4 board. b. See reliability manual for profile. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S15-1540-Rev. E, 29-Jun-15 Document Number: 73252 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si7818DN www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Gate Threshold Voltage V V = V , I = 250 A 1 - 3 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 150 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 150 V, V = 0 V, T = 55 C - - 5 DS GS J a On-State Drain Current I V 5 V, V = 10 V 10 - - A D(on) DS GS V = 10 V, I = 3.4 A - 0.112 0.135 GS D a Drain-Source On-State Resistance R DS(on) V = 6 V, I = 3.3 A - 0.117 0.142 GS D a Forward Transconductance g V = 15 V, I = 3.4 A - 17 - S fs DS D a Diode Forward Voltage V I = 3.2 A, V = 0 V - 0.78 1.2 V SD S GS b Dynamic Total Gate Charge Q -20 30 g Gate-Source Charge Q V = 75 V, V = 10 V, I = 3.4 A -2.7 - nC gs DS GS D Gate-Drain Charge Q -4.7- gd Gate Resistance R f = 1 MHz 0.8 1.7 2.6 g Turn-On Delay Time t -10 15 d(on) Rise Time t -10 15 r V = 100 V, R = 100 DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t -2D GEN g 540 ns d(off) Fall Time t -15 25 f Source-Drain Reverse Recovery Time t -50 75 rr I = 3.2 A, dI/dt = 100 A/s F Reverse Recovery Charge Q - 100 150 nC rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 10 10 V = 10 V thru 4 V GS 8 8 6 6 4 4 T = 125 C C 3 V 2 2 25 C - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics S15-1540-Rev. E, 29-Jun-15 Document Number: 73252 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Drain Current (A) D I - Drain Current (A) D