Si7635DP Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, g V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0049 at V = 10 V - 40 GS TrenchFET Power MOSFET - 20 21.5 nC 0.0075 at V = 4.5 V - 40 GS 100 % R Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK SO-8 Load Switch Adaptor/Battery Switch S S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 D Bottom View Ordering Information: Si7635DP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V V Gate-Source Voltage 16 GS g T = 25 C C - 40 g T = 70 C C - 40 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 26 b, c T = 70 C A A - 21 I Pulsed Drain Current - 70 DM g T = 25 C C - 40 I Continuous Source-Drain Diode Current S b, c T = 25 C A - 4.5 T = 25 C 54 C T = 70 C 34.7 C P Maximum Power Dissipation W D b, c T = 25 C 5.0 A b, c T = 70 C 3.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 20 25 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.8 2.3 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper d. See Solder Profile (www.vishay.com/doc 73257 (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 C/W. g. Package Limited. Document Number: 65021 www.vishay.com S11-1141-Rev. B, 13-Jun-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si7635DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 15 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4.5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 2.2 V GS(th) DS GS D I V = 0 V, V = 16 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 26 A 0.0040 0.0049 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 21 A 0.0060 0.0075 GS D a g V = - 10 V, I = - 26 A 58 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4595 iss Output Capacitance C V = - 10 V, V = 0 V, f = 1 MHz 910 pF oss DS GS C Reverse Transfer Capacitance 813 rss V = - 10 V, V = - 10 V, I = - 20 A 95.3 143 DS GS D Q Total Gate Charge g 46.5 70 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 20 A 13.7 gs DS GS D Q Gate-Drain Charge 12.5 gd R Gate Resistance f = 1 MHz 0.4 1.9 3.8 g t Turn-On Delay Time 19 30 d(on) t Rise Time V = - 10 V, R = 1 10 20 r DD L I - 10 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 65 98 d(off) Fall Time t 13 20 f ns t Turn-On Delay Time 55 83 d(on) Rise Time t 52 78 V = - 10 V, R = 1 r DD L I - 10 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 53 80 d(off) Fall Time t 25 38 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 40 S C A a I - 70 Pulse Diode Forward Current SM Body Diode Voltage V I = - 1 A - 0.74 - 1.1 V SD S t Body Diode Reverse Recovery Time 42 63 ns rr Body Diode Reverse Recovery Charge Q 25 38 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 12 a ns Reverse Recovery Rise Time t 30 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65021 2 S11-1141-Rev. B, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000