X-On Electronics has gained recognition as a prominent supplier of SI7635DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7635DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7635DP-T1-GE3 Vishay

SI7635DP-T1-GE3 electronic component of Vishay
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Part No.SI7635DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 20V 40A 54W 4.9mohm 10V
Datasheet: SI7635DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.6394
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.6921
10 : USD 1.4961
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.5811
10 : USD 1.3981
100 : USD 1.1053
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.5953
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.8027
30 : USD 0.7551
75 : USD 0.6944
150 : USD 0.6613
375 : USD 0.6547
750 : USD 0.6337
1500 : USD 0.6315
N/A

Obsolete
0

Multiples : 3000
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.6627
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI7635DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7635DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si7635DP Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, g V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0049 at V = 10 V - 40 GS TrenchFET Power MOSFET - 20 21.5 nC 0.0075 at V = 4.5 V - 40 GS 100 % R Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK SO-8 Load Switch Adaptor/Battery Switch S S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 D Bottom View Ordering Information: Si7635DP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V V Gate-Source Voltage 16 GS g T = 25 C C - 40 g T = 70 C C - 40 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 26 b, c T = 70 C A A - 21 I Pulsed Drain Current - 70 DM g T = 25 C C - 40 I Continuous Source-Drain Diode Current S b, c T = 25 C A - 4.5 T = 25 C 54 C T = 70 C 34.7 C P Maximum Power Dissipation W D b, c T = 25 C 5.0 A b, c T = 70 C 3.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 20 25 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.8 2.3 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper d. See Solder Profile (www.vishay.com/doc 73257 (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 C/W. g. Package Limited. Document Number: 65021 www.vishay.com S11-1141-Rev. B, 13-Jun-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si7635DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 15 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4.5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 2.2 V GS(th) DS GS D I V = 0 V, V = 16 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 26 A 0.0040 0.0049 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 21 A 0.0060 0.0075 GS D a g V = - 10 V, I = - 26 A 58 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4595 iss Output Capacitance C V = - 10 V, V = 0 V, f = 1 MHz 910 pF oss DS GS C Reverse Transfer Capacitance 813 rss V = - 10 V, V = - 10 V, I = - 20 A 95.3 143 DS GS D Q Total Gate Charge g 46.5 70 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 20 A 13.7 gs DS GS D Q Gate-Drain Charge 12.5 gd R Gate Resistance f = 1 MHz 0.4 1.9 3.8 g t Turn-On Delay Time 19 30 d(on) t Rise Time V = - 10 V, R = 1 10 20 r DD L I - 10 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 65 98 d(off) Fall Time t 13 20 f ns t Turn-On Delay Time 55 83 d(on) Rise Time t 52 78 V = - 10 V, R = 1 r DD L I - 10 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 53 80 d(off) Fall Time t 25 38 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 40 S C A a I - 70 Pulse Diode Forward Current SM Body Diode Voltage V I = - 1 A - 0.74 - 1.1 V SD S t Body Diode Reverse Recovery Time 42 63 ns rr Body Diode Reverse Recovery Charge Q 25 38 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 12 a ns Reverse Recovery Rise Time t 30 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65021 2 S11-1141-Rev. B, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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