X-On Electronics has gained recognition as a prominent supplier of SI7463DP-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7463DP-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7463DP-T1-E3 Vishay

SI7463DP-T1-E3 electronic component of Vishay
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See Product Specifications
Part No.SI7463DP-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 40V 18.6A 5.4W 9.2mohm @ 10V
Datasheet: SI7463DP-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.9325 ea
Line Total: USD 2.93 
Availability - 19456
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.56

2130
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 2.7459
10 : USD 2.349
30 : USD 2.0991
100 : USD 1.8453
500 : USD 1.7289
1000 : USD 1.6793

19456
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 2.9325
10 : USD 2.1045
100 : USD 1.587
500 : USD 1.426
1000 : USD 1.3685
3000 : USD 1.357
6000 : USD 1.334

5820
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.507

1834
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 5
Multiples : 1
5 : USD 1.6575

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the SI7463DP-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7463DP-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si7463DP www.vishay.com Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs V (V) R ( )I (A) DS DS(on) D New low thermal resistance PowerPAK 0.0092 at V = -10 V -18.6 GS package with low 1.07 mm profile -40 0.0140 at V = -4.5 V -15 GS Material categorization: For definitions of compliance please see PowerP AK SO-8 www.vishay.com/doc 99912 Available S S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View D Ordering Information: Si7463DP-T1-E3 (Lead (Pb)-free) Si7463DP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL 10 s STEADY STATE UNIT Drain-Source Voltage V -40 DS V Gate-Source Voltage V 20 GS T = 25 C -18.6 -11 A a Continuous Drain Current (T = 150 C) I J D T = 70 C -15 -8.9 A A Pulsed Drain Current I -60 DM a Continuous Source Current (Diode Conduction) I -4.5 -1.6 S T = 25 C 5.4 1.9 A a Maximum Power Dissipation P W D T = 70 C 3.4 1.2 A Operating Junction and Storage Temperature Range T , T -55 to 150 J stg C b, c Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t 10 s 18 23 a Maximum Junction-to-Ambient R thJA Steady State 52 65 C/W Maximum Junction-to-Case (Drain) Steady State R 11.3 thJC Notes a. Surface mounted on 1 x 1 FR4 board. b. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S13-2282-Rev. G, 04-Nov-13 Document Number: 72440 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si7463DP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Gate Threshold Voltage V V = V , I = -250 A -1 - -3 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = -40 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -40 V, V = 0 V, T = 70 C - - -10 DS GS J a On-State Drain Current I V -5 V, V = -10 V -40 - - A D(on) DS GS V = -10 V, I = -18.6 A - 0.0075 0.0092 GS D a Drain-Source On-State Resistance R DS(on) V = -4.5 V, I = -15 A - 0.0110 0.0140 GS D a Forward Transconductance g V = -15 V, I = -18.6 A - 50 - S fs DS D a Diode Forward Voltage V I = -4.5 A, V = 0 V - -0.8 -1.2 V SD S GS b Dynamic Total Gate Charge Q - 121 140 g Gate-Source Charge Q V = -20 V, V = -10 V, I = -18.6 A - 19.2 - nC gs DS GS D Gate-Drain Charge Q -30.3- gd Gate Resistance R -2.7 - g Turn-On Delay Time t -20 30 d(on) Rise Time t -25 40 r V = -20 V, R = 20 DD L I -1 A, V = -10 V, R = 6 D GEN g Turn-Off Delay Time t -200300 ns d(off) Fall Time t - 100 150 f Source-Drain Reverse Recovery Time t I = -4.5 A, dI/dt = 100 A/s - 45 70 rr F Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-2282-Rev. G, 04-Nov-13 Document Number: 72440 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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