Si7483ADP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.0057 at V = - 10 V - 24 GS TrenchFET Power MOSFETS 30 New Low Thermal Resistance PowerPAK 0.0095 at V = - 4.5 V - 17 GS Package with Low 1.07 mm Profile 100 % R tested g APPLICATIONS PowerP AK SO-8 Battery and Load Switching - Notebook Computers - Notebook Battery Packs S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 S D 8 D 7 D G 6 D 5 Bottom V iew D Ordering Information: Si7483ADP-T1-E3 (Lead (Pb)-free) Si7483ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V - 30 DS V Gate-Source Voltage V 20 GS T = 25 C - 24 - 14 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 19 - 11 A A Pulsed Drain Current I - 60 DM a I - 4.5 - 1.6 Continuous Source Current (Diode Conduction) S T = 25 C 5.4 1.9 A a P W Maximum Power Dissipation D T = 70 C 3.4 1.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b,c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 18 23 a R Maximum Junction-to-Ambient thJA Steady State 50 65 C/W Maximum Junction-to-Case (Drain) Steady State R 1.0 1.5 thJC Notes a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73025 www.vishay.com S09-0270-Rev. C, 16-Feb-09 1Si7483ADP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Gate Threshold Voltage V V = V , I = - 250 A - 1.0 - 3.0 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 70 C - 10 DS GS J a On-State Drain Current I V = - 5 V, V = - 10 V - 30 A D(on) DS GS V = - 10 V, I = - 24 A 0.0047 0.0057 GS D a Drain-Source On-State Resistance R DS(on) V = - 4.5 V, I = - 17 A 0.0075 0.0095 GS D a Forward Transconductance g V = - 15 V, I = - 24 A 70 S fs DS D a Diode Forward Voltage V I = - 2.9 A, V = 0 V - 0.73 - 1.1 V SD S GS b Dynamic Total Gate Charge Q 120 180 g Gate-Source Charge Q V = - 15 V, V = - 10 V, I = - 24 A 18 nC gs DS GS D Gate-Drain Charge Q 33 gd Gate Resistance R 1.6 3.2 4.8 g Turn-On Delay Time t 22 35 d(on) Rise Time t 33 50 V = - 15 V, R = 15 r DD L I - 1.0 A, V = - 10 V, R = 6 Turn-Off Delay Time t 210320 D GEN g ns d(off) Fall Time t 130 200 f Source-Drain Reverse Recovery Time t I = - 2.9 A, dI/dt = 100 A/s 70 130 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 60 V = 10 V thru 4 V GS 50 50 40 40 30 30 20 20 T = 125 C C 3 V 10 10 25 C - 55 C 0 0 0 1234 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73025 2 S09-0270-Rev. C, 16-Feb-09 I - Drain Current (A) D I - Drain Current (A) D