Si7491DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) DS DS(on) D Available 0.0085 at V = - 10 V - 18 GS TrenchFET Power MOSFETS 30 New Low Thermal Resistance PowerPAK 0.013 at V = - 4.5 V - 14 GS Package with Low 1.07 mm Profile APPLICATIONS Battery and Load Switching PowerP AK SO-8 - Notebook and Tablet Computers - Notebook and Tablet Battery Packs S 6.15 mm 5.15 mm 1 S 2 S 3 G S 4 D 8 D 7 D G 6 D 5 Bottom V i e w D Ordering Information: Si7491DP-T1-E3 (Lead (Pb)-free) Si7491DP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V - 30 Drain-Source Voltage DS V Gate-Source Voltage V 20 GS T = 25 C - 18 - 11 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 14 - 8 A A Pulsed Drain Current I - 50 DM a Continuous Source Current (Diode Conduction) I - 4.5 - 1.6 S T = 25 C 51.8 A a Maximum Power Dissipation P W D T = 70 C 3.2 1.1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 20 25 a R Maximum Junction-to-Ambient thJA Steady State 54 68 C/W Maximum Junction-to-Case (Drain) Steady State R 1.7 2.2 thJC Notes a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72276 www.vishay.com S09-0270-Rev. C, 16-Feb-09 1Si7491DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = - 250 A - 1.0 - 3.0 V Gate Threshold Voltage GS(th) DS GS D I V = 0 V, V = 20 V 100 nA Gate-Body Leakage GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 70 C - 10 DS GS J a I V = - 5 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 18 A 0.007 0.0085 GS D a Drain-Source On-State Resistance R DS(on) V = - 4.5 V, I = - 14 A 0.0105 0.013 GS D a Forward Transconductance g V = - 15 V, I = - 18 A 46 S fs DS D a V I = - 4.5 A, V = 0 V - 0.74 - 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 56 85 g Q V = - 15 V, V = - 5 V, I = - 18 A 12 Gate-Source Charge nC gs DS GS D Gate-Drain Charge Q 25 gd t 150 225 Turn-On Delay Time d(on) 190 290 Rise Time t V = - 15 V, R = 15 r DD L I - 1 A, V = - 4.5 V, R = 6 t 120180 Turn-Off Delay Time D GEN g d(off) ns t 90 140 Fall Time f R 2.5 Gate Resistance g t I = - 2.9 A, dI/dt = 100 A/s 50 80 Source-Drain Reverse Recovery Time rr F Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 60 V = 10 V thru 4 V GS 50 40 40 30 30 20 20 3 V T = 125 C C 10 10 25 C - 55 C 0 0 0 1234 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72276 2 S09-0270-Rev. C, 16-Feb-09 I - Drain Current (A) D I - Drain Current (A) D