Si7459DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.0068 at V = - 10 V - 30 - 22 GS TrenchFET Power MOSFETs New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile APPLICATIONS Battery and Load Switching - Notebook Computers PowerPAK SO-8 - Notebook Battery Packs S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 S D 8 D 7 D G 6 D 5 Bottom View D Ordering Information: Si7459DP-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si7459DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V - 30 DS V Gate-Source Voltage V 25 GS T = 25 C - 22 - 13 A a I Continuous Drain Current (T = 150C) D J T = 70 C - 17 - 10 A A Pulsed Drain Current I - 60 DM a I - 4.5 - 1.6 Continuous Source Current (Diode Conduction) S T = 25 C 5.4 1.9 A a P W Maximum Power Dissipation D T = 70 C 3.4 1.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b,c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 18 23 a R Maximum Junction-to-Ambient thJA Steady State 52 65 C/W Maximum Junction-to-Case (Drain) Steady State R 1.0 1.5 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72631 www.vishay.com S09-0273-Rev. D, 16-Feb-09 1Si7459DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Condition Min. Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 1.0 - 3.0 V GS(th) DS GS D V = 0 V, V = 20 V 100 DS GS Gate-Body Leakage I nA GSS V = 0 V, V = 25 V 200 DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 70 C - 10 DS GS J a I V = - 5 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS a R V = - 10 V, I = - 22 A 0.0056 0.0068 Drain-Source On-State Resistance DS(on) GS D a g V = - 15 V, I = - 22 A 50 S Forward Transconductance fs DS D a V I = - 2.9 A, V = 0 V - 0.71 - 1.1 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 113 170 g Q V = - 15 V, V = - 10 V, I = - 22 A Gate-Source Charge 17 nC gs DS GS D Q Gate-Drain Charge 32.5 gd t Turn-On Delay Time 25 40 d(on) t Rise Time V = - 15 V, R = 15 20 30 r DD L ns I - 1 A, V = - 10 V, R = 6 t Turn-Off Delay Time D GEN g 180 270 d(off) t Fall Time 130 200 f Gate Resistance R 4 g t I = - 2.9 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 100 150 ns rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 60 V = 10 V thru 5 V GS 4 V 50 50 40 40 30 30 20 20 T = 125 C C 25 C 10 10 3 V -55 C 0 0 0 1234 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72631 2 S09-0273-Rev. D, 16-Feb-09 I - Drain Current (A) D I - Drain Current (A) D