New Product Si7611DN Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET e 0.025 at V = - 10 V - 18 GS Low Thermal Resistance PowerPAK RoHS - 40 41 nC Package with Small Size and Low 1.07 mm COMPLIANT e 0.033 at V = - 4.5V - 18 GS Profile 100 % R and UIS Tested g APPLICATIONS Load Switch PowerPAK 1212-8 S 3.30 mm 3.30 mm S 1 S 2 S 3 G 4 D G 8 D 7 D 6 D 5 Bottom Vie w D Ordering Information: Si7611DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 40 DS V V Gate-Source Voltage 20 GS e T = 25 C - 18 C e T = 70 C - 18 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 9.3 A a, b T = 70 C - 7.4 A A I Pulsed Drain Current - 20 DM e T = 25 C - 18 C Continuous Source-Drain Diode Current I S a, b T = 25 C - 3 A I - 23 Avalanche Current AS L = 0.1 mH Single-Pulse Avalanche Energy E 26 mJ AS T = 25 C 39 C T = 70 C 25 C P Maximum Power Dissipation W D a, b T = 25 C 3.7 A a, b T = 70 C 2.4 A T , T Operating Junction and Storage Temperature Range - 50 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. See Solder Profile (New Product Si7611DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, b t 10 s R 26 34 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 2.4 3.2 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Maximum under Steady State conditions is 81 C/W. SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 40 V DS GS D V Temperature Coefficient V /T - 41 DS DS J I = - 250 A mV/C D Temperature Coefficient V /T V 4.7 GS(th) J GS(th) V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 40 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 40 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 10 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 9.3 A 0.021 0.025 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 8.1 A 0.027 0.033 GS D a g V = - 15 V, I = - 9.3 A 25 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1980 iss C V = - 20 V, V = 0 V, f = 1 MHz Output Capacitance 215 pF oss DS GS C Reverse Transfer Capacitance 175 rss V = - 20 V, V = - 10 V, I = - 9.3 A 41 62 DS GS D Q Total Gate Charge g 21 32 nC Q V = - 20 V, V = - 4.5 V, I = - 9.3 A Gate-Source Charge 7 gs DS GS D Q Gate-Drain Charge 10 gd R Gate Resistance f = 1 MHz 1.9 2.9 g t Turn-On Delay Time 47 71 d(on) t Rise Time V = - 20 V, R = 5 150 225 r DD L t I - 7.4 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 28 41 d(off) D GEN g t Fall Time 12 18 f ns t Turn-On Delay Time 10 15 d(on) t Rise Time V = - 20 V, R = 5 11 17 r DD L t I - 7.4 A, V = - 10 V, R = 1 Turn-Off DelayTime 30 45 d(off) D GEN g t Fall Time 914 f Drain-Source Body Diode Characteristics e I T = 25 C Continuous Source-Drain Diode Current S C - 18 A a I - 20 Pulse Diode Forward Current SM Body Diode Voltage V I = - 7.4 A - 0.8 - 1.2 V SD F Body Diode Reverse Recovery Time t 21 32 ns rr Body Diode Reverse Recovery Charge Q 17 26 nC rr I = - 7.4 A, di/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 15 a ns Reverse Recovery Rise Time t 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69939 2 S-80895-Rev. B, 21-Apr-08