New Product Si7625DN Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition d 0.007 at V = - 10 V - 35 TrenchFET Power MOSFET GS - 30 39.5 nC 100% R Tested d g 0.011 at V = - 4.5 V - 35 GS 100% UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8 APPLICATIONS S S 3.30 mm 3.30 mm Notebook Adapter Switch 1 S Notebook Load Switch 2 S 3 G G 4 D 8 D 7 D 6 D 5 D Bottom View Ordering Information: Si7625DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 20 GS d T = 25 C - 35 C d T = 70 C - 35 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 17.3 A a, b T = 70 C - 13.8 A A I - 80 Pulsed Drain Current DM d T = 25 C - 35 C Continuous Source-Drain Diode Current I S a, b T = 25 C - 3.0 A I Avalanche Current - 20 AS L = 0.1 mH E Single-Pulse Avalanche Energy 20 mJ AS T = 25 C 52 C T = 70 C 33 C P Maximum Power Dissipation W D a, b T = 25 C 3.7 A a, b T = 70 C 2.4 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C e, f 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 26 33 thJA C/W R Maximum Junction-to-Case Steady State 1.9 2.4 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 81 C/W. d. Package limited. e. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 65737 www.vishay.com S10-0638-Rev. A, 22-Mar-10 1New Product Si7625DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 23 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5.0 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.0 - 2.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 15 A 0.0056 0.007 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 10 A 0.0088 0.011 GS D a g V = - 10 V, I = - 15 A 47 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4427 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 452 pF oss DS GS C Reverse Transfer Capacitance 430 rss V = - 15 V, V = - 10 V, I = - 10 A 84.5 126 DS GS D Q Total Gate Charge g 39.5 60 nC Q V = - 15 V, V = - 4.5 V, I = - 10 A Gate-Source Charge 11 gs DS GS D Q Gate-Drain Charge 13.5 gd R Gate Resistance f = 1 MHz 0.4 1.8 3.6 g t Turn-On Delay Time 15 30 d(on) t V = - 15 V, R = 1.5 Rise Time 13 26 r DD L t I - 10 A, V = - 10 V, R = 1 Turn-Off DelayTime 55 100 d(off) D GEN g t Fall Time 10 20 f ns t Turn-On Delay Time 55 100 d(on) t V = - 15 V, R = 1.5 Rise Time 42 80 r DD L t I - 10 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 52 100 d(off) D GEN g t Fall Time 17 34 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 35 S C A Pulse Diode Forward Current I - 80 SM Body Diode Voltage V I = - 3 A, V = 0 V - 0.74 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 14 24 ns rr Body Diode Reverse Recovery Charge Q 48 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 8 a ns Reverse Recovery Rise Time t 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65737 2 S10-0638-Rev. A, 22-Mar-10