X-On Electronics has gained recognition as a prominent supplier of SI7619DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7619DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7619DN-T1-GE3 Vishay

SI7619DN-T1-GE3 electronic component of Vishay
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Part No.SI7619DN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET -30V -24A 27.8W
Datasheet: SI7619DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6039 ea
Line Total: USD 0.6 
Availability - 40062
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
34920
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.3331

313
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5024
10 : USD 0.5005
25 : USD 0.4956
100 : USD 0.4062
250 : USD 0.3501

5820
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.3185
6000 : USD 0.3185
9000 : USD 0.3185
12000 : USD 0.3185
15000 : USD 0.3185

1867
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7099
10 : USD 0.6241
30 : USD 0.5802
100 : USD 0.5383
500 : USD 0.5115
1000 : USD 0.4981

40062
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6039
10 : USD 0.5302
100 : USD 0.3872
500 : USD 0.3443
1000 : USD 0.3179
3000 : USD 0.2882
24000 : USD 0.2816

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Brand
Configuration
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI7619DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7619DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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3.3 mm Si7619DN www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK 1212-8 Single D TrenchFET power MOSFET D 8 D 7 100 % R and UIS tested D g 6 5 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 11 2 SS APPLICATIONS S 3 S 4 S 1 G Notebook PC Top View Bottom View - Load switch - Battery switch PRODUCT SUMMARY G - Adaptor switch V (V) -30 DS R max. ( ) at V = -10 V 0.021 DS(on) GS R max. ( ) at V = -4.5 V 0.034 DS(on) GS Q typ. (nC) 15 g d, e D I (A) -24 D P-Channel MOSFET Configuration Single ORDERING INFORMATION Package PowerPAK 1212-8 Lead (Pb)-free and halogen-free Si7619DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -30 DS V Gate-source voltage V 20 GS e T = 25 C -24 C T = 70 C -23.8 C Continuous drain current (T = 150 C) I J D a, b T = 25 C -10.5 A a, b T = 70 C -8.3 A A Pulsed drain current I -50 DM T = 25 C -23.2 C Continuous source-drain diode current I S a, b T = 25 C -2.9 A Avalanche current I -20 AS L = 0.1 mH Single-pulse avalanche energy E 20 mJ AS T = 25 C 27.8 C T = 70 C 17.8 C Maximum power dissipation P W D a, b T = 25 C 3.5 A a, b T = 70 C 2.2 A Operating junction and storage temperature range T , T -55 to +150 J stg C f, g Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT a, c Maximum junction-to-ambient t 10 s R 29 36 thJA C/W Maximum junction-to-case Steady state R 3.6 4.5 thJC Notes a. Surface mounted on 1 x 1 FR4 board b. t = 10 s c. Maximum under steady state conditions is 81 C/W d. Based on T = 25 C C e. Package limited f. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection g. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S09-2269-Rev. A, 02-Nov-09 Document Number: 65533 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 3.3 mm Si7619DN www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -30 - - V DS GS D V temperature coefficient V /T --31 - DS DS J I = -250 A mV/C D V temperature coefficient V /T -4.5 - GS(th) GS(th) J Gate-source threshold voltage V V = V , I = -250 A -1 - -3 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = -30 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I A DSS V = -30 V, V = 0 V, T = 55 C - - -5 DS GS J a On-state drain current I V -10 V, V = -10 V -30 - - A D(on) DS GS V = -10 V, I = -10.5 A - 0.0175 0.0210 GS D a Drain-source on-state resistance R DS(on) V = -4.5 V, I = -8.3 A - 0.0283 0.0340 GS D a Forward transconductance g V = -10 V, I = -10.5 A - 23 - S fs DS D b Dynamic Input capacitance C -1350 - iss Output capacitance C V = -15 V, V = 0 V, f = 1 MHz -215 - pF oss DS GS Reverse transfer capacitance C -185 - rss V = -15 V, V = -10 V, I = -10.5 A - 32 50 DS GS D Total gate charge Q g -15 25 nC Gate-source charge Q V = -15 V, V = -4.5 V, I = -10.5 A -4 - gs DS GS D Gate-drain charge Q -7.5 - gd Gate resistance R f = 1 MHz 1.2 5.8 11.6 g Turn-on delay time t -10 15 d(on) Rise time t -8 15 r V = -15 V, R = 1.8 DD L I -8.4 A, V = -10 V, R = 1 Turn-off delay time t D GEN g -45 70 d(off) Fall time t -12 25 f ns Turn-on delay time t -42 70 d(on) Rise time t -35 60 r V = -15 V, R = 1.8 DD L I -8.4 A, V = -4.5 V, R = 1 Turn-off delay time t D GEN g -40 70 d(off) Fall time t -16 30 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - -23.2 S C A Pulse diode forward current I -- -50 SM Body diode voltage V I = -8.4 A, V = 0 V - -0.85 -1.2 V SD S GS Body diode reverse recovery time t -34 60 ns rr Body diode reverse recovery charge Q -22 40 nC rr I = -8.4 A, di/dt = 100 A/s, F T = 25 C Reverse recovery fall time t J -11 - a ns Reverse recovery rise time t -23 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S09-2269-Rev. A, 02-Nov-09 Document Number: 65533 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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