New Product SiB488DK Vishay Siliconix N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.020 at V = 4.5 V TrenchFET Power MOSFET 9 GS New Thermally Enhanced PowerPAK 0.024 at V = 2.5 V 12 9 7.5 nC GS SC-75 Package 0.029 at V = 1.8 V 9 GS - Small Footprint Area - Low On-Resistance 100 % R Tested g Compliant to RoHS Directive 2002/95/EC PowerPAK SC-75-6L-Single APPLICATIONS Load Switch, PA Switch and Battery Switch for Portable Devices 1 D D High Frequency dc-to-dc Converters 2 D 3 G Marking Code D 6 A G X S G D Part code 5 X X X S 1.60 mm 1.60 mm Lot Traceability 4 and Date code S Ordering Information: SiB488DK-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 12 DS V Gate-Source Voltage V 8 GS a T = 25 C 9 C a T = 70 C 9 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 9 A b, c T = 70 C A A 7.2 I Pulsed Drain Current 35 DM a T = 25 C 9 C Continuous Source-Drain Diode Current I S b, c T = 25 C A 2 T = 25 C 13 C T = 70 C 8.4 C P Maximum Power Dissipation W D b, c T = 25 C A 2.4 b, c T = 70 C A 1.6 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 41 51 Maximum Junction-to-Ambient thJA C/W Steady State R 7.5 9.5 Maximum Junction-to-Case (Drain) thJC Notes: a. T = 25 C, package limited. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 C/W. Document Number: 65668 www.vishay.com S10-1052-Rev. B, 03-May-10 1New Product SiB488DK Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 12 V DS GS D V Temperature Coefficient V /T 11 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.7 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.4 1.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = 12 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 12 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 15 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 6.3 A 0.016 0.020 GS D a R V = 2.5 V, I = 5.8 A 0.019 0.024 Drain-Source On-State Resistance DS(on) GS D V = 1.8 V, I = 2.5 A 0.023 0.029 GS D a g V = 10 V, I = 6.3 A 32 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 725 iss C V = 6 V, V = 0 V, f = 1 MHz Output Capacitance 195 pF oss DS GS C Reverse Transfer Capacitance 90 rss V = 6 V, V = 8 V, I = 9 A 13.1 20 DS GS D Q Total Gate Charge g 7.5 12 nC Q Gate-Source Charge V = 6 V, V = 4.5 V, I = 9 A 1.1 gs DS GS D Q Gate-Drain Charge 0.8 gd R Gate Resistance f = 1 MHz 0.5 2.5 5 g Turn-On Delay Time t 10 15 d(on) t Rise Time V = 6 V, R = 0.83 10 15 r DD L I 7.2 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 20 30 D GEN g d(off) t Fall Time 10 15 f ns Turn-On Delay Time t 510 d(on) t Rise Time V = 6 V, R = 0.83 10 15 r DD L I 7.2 A, V = 8 V, R = 1 Turn-Off Delay Time t 20 30 D GEN g d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 9 S C A I Pulse Diode Forward Current 35 SM V I = 7.2 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 15 30 ns rr Q Body Diode Reverse Recovery Charge 48 nC rr I = 7.2 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 8 a ns t Reverse Recovery Rise Time 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65668 2 S10-1052-Rev. B, 03-May-10