New Product Si7738DP Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.038 at V = 10 V 150 30 35 nC TrenchFET Power MOSFET GS 100 % UIS Tested PowerPAK SO-8 APPLICATIONS Primary Side Switch S 6.15 mm 5.15 mm 1 D S 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: Si7738DP-T1-E3 (Lead (Pb)-free) Si7738DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 150 DS V Gate-Source Voltage V 20 GS a T = 25 C 30 C T = 70 C 26 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 7.7 A b, c T = 70 C 6.2 A A Pulsed Drain Current I 60 DM a T = 25 C 30 C Continuous Source-Drain Diode Current I S b, c T = 25 C 4.5 A I Single Pulse Avalanche Current 30 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 45 AS T = 25 C 96 C T = 70 C 62 C Maximum Power Dissipation P W D b, c T = 25 C 5.4 A b, c T = 70 C 3.5 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 18 23 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 11.3 thJC Notes: a. Package limited b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 C/W. Document Number: 69982 www.vishay.com S09-0536-Rev. C, 06-Apr-09 1New Product Si7738DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 150 V DS GS D V /T V Temperature Coefficient 200 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 10 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 24V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 150 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 150 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 30 A D(on) DS GS a R V = 10 V, I = 7.7 A Drain-Source On-State Resistance 0.031 0.038 DS(on) GS D a Forward Transconductance g V = 15 V, I = 7.7 A 22 S fs DS D b Dynamic C Input Capacitance 2100 iss Output Capacitance C V = 75 V, V = 0 V, f = 1 MHz 160 pF oss DS GS C Reverse Transfer Capacitance 45 rss Q Total Gate Charge 35 53 g Q Gate-Source Charge V = 75 V, V = 10 V, I = 7.7 A 8 nC gs DS GS D Q Gate-Drain Charge 9 gd R Gate Resistance f = 1 MHz 1.6 g t Turn-On Delay Time 15 25 d(on) t Rise Time V = 75 V, R = 12 10 15 r DD L ns I 6.2 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 25 40 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 30 S C A Pulse Diode Forward Current I 30 SM V I = 6.2 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t 75 115 ns rr Q Body Diode Reverse Recovery Charge 245 370 nC rr I = 6.2 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 58 a ns t Reverse Recovery Rise Time 17 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69982 2 S09-0536-Rev. C, 06-Apr-09