X-On Electronics has gained recognition as a prominent supplier of SI7806ADN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7806ADN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7806ADN-T1-GE3 Vishay

SI7806ADN-T1-GE3 electronic component of Vishay
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Part No.SI7806ADN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 30V 14A 3.7W 11mohm 10V
Datasheet: SI7806ADN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.7087 ea
Line Total: USD 2126.1 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.7087
6000 : USD 0.6724
9000 : USD 0.6615
24000 : USD 0.6615

   
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Id - Continuous Drain Current
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Vgs - Gate-Source Breakdown Voltage
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We are delighted to provide the SI7806ADN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7806ADN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si7806ADN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.011 at V = 10 V 14 GS TrenchFET Power MOSFET 30 0.016 at V = 4.5 V 12 GS PWM Optimized New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % R Tested g APPLICATIONS PowerPAK 1212-8 DC/DC Converters - Secondary Synchronous Rectifier S - High-Side MOSFET in Synchronous Buck 3.30 mm 3.30 mm 1 S D 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: Si7806ADN-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si7806ADN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 20 GS T = 25 C 14 9 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 11 7.5 A I Pulsed Drain Current 40 A DM a I 3.2 1.3 Continuous Source Current (Diode Conduction) S Single Pulse Avalanche Current I 14 AS L = 0.1 mH E Avalanche Energy 9.8 mJ AS T = 25 C 3.7 1.5 A a P W Maximum Power Dissipation D T = 70 C 2.3 1.0 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 28 34 a R Maximum Junction-to-Ambient thJA Steady State 66 81 C/W Maximum Junction-to-Case (Drain) Steady State R 2.0 2.4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72995 www.vishay.com S-83050-Rev. D, 29-Dec-08 1Si7806ADN Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1.0 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 14 A 0.009 0.011 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 12 A 0.013 0.016 GS D a g V = 15 V, I = 14 A 32 S Forward Transconductance fs DS D a V I = 3.2 A, V = 0 V 0.8 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 13.2 20 g Q V = 15 V, V = 5 V, I = 14 A Gate-Source Charge 5.3 nC gs DS GS D Gate-Drain Charge Q 4.3 gd R Gate Resistance 0.9 1.8 2.7 g Turn-On Delay Time t 13 20 d(on) t Rise Time V = 15 V, R = 15 10 15 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 33 50 ns D GEN g d(off) t Fall Time 10 15 f Source-Drain Reverse Recovery Time t I = 2.3 A, dI/dt = 100 A/s 25 40 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 40 V = 10 thru 5 V GS 35 35 4 V 30 30 25 25 20 20 15 15 T = 125 C C 10 10 5 5 25 C 3 V - 55 C 0 0 0 1234 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72995 2 S-83050-Rev. D, 29-Dec-08 I - Drain Current (A) D I - Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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