Si7872DP Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ()I (A) DS DS(on) D 0.022 at V = 10 V 10 LITTLE FOOT Plus Schottky GS Channel-1 0.030 at V = 4.5 V 8 PWM Optimized RoHS GS 30 COMPLIANT 0.022 at V = 10 V 10 GS New Low Thermal Resistance PowerPAK Channel-2 0.028 at V = 4.5 V 8 GS Package with low 1.07 mm Profile SCHOTTKY PRODUCT SUMMARY APPLICATIONS V (V) SD Asymmetrical Buck-Boost DC/DC Converter V (V) I (A) DS Diode Forward Voltage F 30 0.50 V at 1.0 A 3.0 PowerP AK SO-8 S1 5.15 mm 6.15 mm 1 G1 D 1 2 D 2 S2 3 G2 4 D1 8 D1 Schottky Diode 7 G 1 D2 G 2 6 D2 5 Bottom View S 1 S 2 Ordering Information: Si7872DP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET N-Channel MOSFET Si7872DP-T1-GE3 (Lead (Pb)-free and Halogen-f ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A 10 s Steady State Parameter Symbol Channel-1 Channel-2 Channel-1 Channel-2 Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 12 20 12 GS T = 25 C 10 6.4 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 7 5.1 A A Pulsed Drain Current I 30 DM a I 2.9 1.1 Continuous Source Current (Diode Conduction) S T = 25 C 3.5 1.4 A a P W Maximum Power Dissipation D T = 70 C 2.2 0.9 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b,c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS MOSFET Schottky Parameter Symbol Typical Maximum Typical Maximum Unit t 10 s 26 35 26 35 a R Maximum Junction-to-Ambient thJA Steady State 60 85 60 85 C/W Maximum Junction-to-Case (Drain) Steady State R 4.1 6.0 4.1 6.0 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (Si7872DP Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J b Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Ch-1 1.0 3.0 V V = V , I = 250 A Gate Threshold Voltage V GS(th) DS GS D Ch-2 0.8 2.0 V = 0 V, V = 20 V Ch-1 100 DS GS I Gate-Body Leakage nA GSS V = 0 V, V = 12 V Ch-2 100 DS GS Ch-1 1 V = 30 V, V = 0 V DS GS Ch-2 100 I Zero Gate Voltage Drain Current A DSS Ch-1 15 V = 30 V, V = 0 V, T = 85 C DS GS J Ch-2 2000 Ch-1 20 b I V = 5 V, V = 10 V A On-State Drain Current D(on) DS GS Ch-2 20 Ch-1 0.017 0.022 V = 10 V, I = 7.5 A GS D Ch-2 0.016 0.022 b R Drain-Source On-State Resistance DS(on) Ch-1 0.024 0.030 V = 4.5 V, I = 6.5 A GS D Ch-2 0.020 0.028 Ch-1 19 b g V = 15 V, I = 7.5 A S Forward Transconductance fs DS D Ch-2 21 Ch-1 0.75 1.2 b V I = 1 A, V = 0 V V Diode Forward Voltage SD S GS Ch-2 0.47 0.5 a Dynamic Ch-1 7 11 Total Gate Charge Q g Ch-2 11.5 18 Ch-1 2.9 Q V = 15 V, V = 4.5 V, I = 7.5 A Gate-Source Charge nC gs DS GS D Ch-2 3.8 Ch-1 2.5 Q Gate-Drain Charge gd Ch-2 3.5 Ch-1 1.5 Gate Resistance R G Ch-2 1.8 Ch-1 9 15 t Turn-On Delay Time d(on) Ch-2 12 20 Ch-1 10 17 t Rise Time r V = 15 V, R = 15 Ch-2 10 17 DD L I 1 A, V = 10 V, R = 6 Ch-1 19 30 D GEN G Turn-Off Delay Time t ns d(off) Ch-2 40 66 Ch-1 9 15 t Fall Time f Ch-2 9 15 Ch-1 35 55 Source-Drain Reverse Recovery t I = 1.7 A, dI/dt = 100 A/s rr F Time Ch-2 28 45 Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit I = 1.0 A 0.47 0.50 F Forward Voltage Drop V V F I = 1.0 A, T = 125 C 0.36 0.42 F J V = 30 V 0.004 0.100 r I Maximum Reverse Leakage Current V = 30 V, T = 100 C 0.7 10 mA rm r J V = 30 V, T = 125 C 3.0 20 r J Junction Capacitance C V = 10 V 50 pF T r Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72035 2 S-82116-Rev. C, 08-Sep-08