New Product SiA406DJ Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0198 at V = 4.5 V 4.5 GS TrenchFET Power MOSFET 0.0222 at V = 2.5 V 12 4.5 13.7 nC GS New Thermally Enhanced PowerPAK 0.0264 at V = 1.8 V SC-70 Package 4.5 GS - Small Footprint Area - Low On-Resistance 100 % R Tested g PowerPAK SC-70-6L-Single Compliant to RoHS Directive 2002/95/EC APPLICATIONS D 1 D Load Switch for Portable Devices 2 DC/DC Converters Marking Code D 3 G A H X D Part code G 6 X X X S D Lot Traceability 5 and Date code S 2.05 mm 2.05 mm 4 S Ordering Information: SiA406DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 12 DS V Gate-Source Voltage V 8 GS a T = 25 C 4.5 C a T = 70 C C 4.5 a I Continuous Drain Current (T = 150 C) D J a, b, c T = 25 C 4.5 A a, b, c T = 70 C A 4.5 A I Pulsed Drain Current 20 DM a T = 25 C 4.5 C I Continuous Source-Drain Diode Current S b, c T = 25 C 2.9 A T = 25 C 19 C T = 70 C 12 C P Maximum Power Dissipation W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 5 s 28 36 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 5.3 6.5 thJC Notes: a. Package limited b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. Document Number: 65361 www.vishay.com S09-1924-Rev. A, 28-Sep-09 1New Product SiA406DJ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 12 V DS GS D V Temperature Coefficient V /T 11 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.9 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.4 1.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = 12 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 12 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 20 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 10.8 A 0.0165 0.0198 GS D a R V = 2.5 V, I = 10.2 A 0.0185 0.0222 Drain-Source On-State Resistance DS(on) GS D V = 1.8 V, I = 3 A 0.0220 0.0264 GS D a g V = 6 V, I = 10.8 A 38 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 1380 iss C V = 6 V, V = 0 V, f = 1 MHz Output Capacitance 345 pF oss DS GS C Reverse Transfer Capacitance 155 rss V = 6 V, V = 5 V, I = 10.8 A 15.2 23 DS GS D Q Total Gate Charge g 13.7 21 nC Q Gate-Source Charge V = 6 V, V = 4.5 V, I = 10.8 A 2.6 gs DS GS D Q Gate-Drain Charge 1.1 gd R Gate Resistance f = 1 MHz 0.5 2.5 5 g t Turn-On Delay Time 10 20 d(on) t Rise Time V = 6 V, R = 0.7 918 r DD L I 8.6 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 40 60 D GEN g d(off) t Fall Time 14 21 f ns Turn-On Delay Time t 612 d(on) t Rise Time V = 6 V, R = 0.7 11 17 r DD L I 8.6 A, V = 8 V, R = 1 Turn-Off Delay Time t 27 41 D GEN g d(off) t Fall Time 918 f Drain-Source Body Diode Characteristics c I T = 25 C Continuous Source-Drain Diode Current S C 4.5 A Pulse Diode Forward Current I 20 SM V I = 8.6 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t 22 33 ns rr Q Body Diode Reverse Recovery Charge 714 nC rr I = 8.6 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 8 a ns t Reverse Recovery Rise Time 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65361 2 S09-1924-Rev. A, 28-Sep-09