SiA419DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a 0.030 at V = - 4.5 V - 12 GS TrenchFET Power MOSFET a 0.039 at V = - 2.5 V New Thermally Enhanced PowerPAK GS - 12 a SC-70 Package - 20 0.051 at V = - 1.8 V 17.5 nC GS - 12 - Small Footprint Area a 0.066 at V = - 1.5 V GS - 12 - Low On-Resistance 0.113 at V = - 1.2 V - 10.6 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK SC-70-6L-Single Load Switch, PA Switch and Battery Switch for Portable Devices S 1 D 2 Marking Code D G 3 G B I X D Part code 6 X X X S D Lot Traceability 5 and Date code S 2.05 mm 2.05 mm 4 D Ordering Information: SiA419DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V V Gate-Source Voltage 5 GS a T = 25 C - 12 C a T = 70 C - 12 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 8.8 b, c T = 70 C A - 7 A I Pulsed Drain Current - 30 DM a T = 25 C - 12 C I Continuous Source-Drain Diode Current S b, c T = 25 C - 2.9 A T = 25 C 19 C T = 70 C 12 C P Maximum Power Dissipation W D b, c T = 25 C 3.5 A b, c T = 70 C A 2.2 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 28 36 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 5.3 6.5 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 80 C/W. Document Number: 74620 www.vishay.com S09-1397-Rev. C, 20-Jul-09 1SiA419DJ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 20 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.35 - 0.85 V GS(th) DS GS D I V = 0 V, V = 5 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 10 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 5.9 A 0.025 0.030 GS D V = - 2.5 V, I = - 5.1 A 0.032 0.039 GS D a R V = - 1.8 V, I = - 2 A 0.042 0.051 Drain-Source On-State Resistance DS(on) GS D V = - 1.5 V, I = - 1.5 A 0.049 0.066 GS D V = - 1.2 V, I = - 0.88 A 0.075 0.113 GS D a g V = - 10 V, I = - 5.9 A 20 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1500 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 210 pF oss DS GS C Reverse Transfer Capacitance 150 rss V = - 10 V, V = - 5 V, I = - 8.8 A 19 29 DS GS D Q Total Gate Charge g 17.5 27 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 8.8 A 2.1 gs DS GS D Q Gate-Drain Charge 5.2 gd Gate Resistance R f = 1 MHz 9 g t Turn-On Delay Time 16 25 d(on) Rise Time t 46 70 V = - 10 V, R = 1.4 r DD L I - 7 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 90 135 d(off) Fall Time t 52 80 f ns t Turn-On Delay Time 10 15 d(on) Rise Time t 15 25 V = - 10 V, R = 1.4 r DD L I - 7 A, V = - 5 V, R = 1 t Turn-Off Delay Time D GEN g 91 135 d(off) t Fall Time 50 75 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 12 S C A I Pulse Diode Forward Current - 30 SM V I = - 7 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 20 40 ns rr Q Body Diode Reverse Recovery Charge 12 20 nC rr I = - 7 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 12 a ns Reverse Recovery Rise Time t 8 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74620 2 S09-1397-Rev. C, 20-Jul-09