SiA421DJ Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) Q (Typ.) DS DS(on) D g New Thermally Enhanced PowerPAK a SC-70 Package 0.035 at V = - 10 V - 12 GS - 30 10 nC - Small Footprint Area a 0.056 at V = - 4.5 V GS - 12 - Low On-Resistance Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS Load Switch for Portable Devices Buck Converter PowerPAK SC-70-6L-Single 1 S D Marking Code 2 D B J X 3 G Part code G D X X X 6 Lot Traceability S D and Date code 5 2.05 mm S 2.05 mm 4 D Ordering Information: SiA421DJ-T4-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET SiA421DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 30 DS V Gate-Source Voltage V 20 GS a T = 25 C - 12 C a T = 70 C - 12 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 7.9 A b, c T = 70 C A - 6.3 A Pulsed Drain Current I - 35 DM a T = 25 C - 12 C I Continuous Source-Drain Diode Current S b, c T = 25 C - 2.9 A T = 25 C 19 C T = 70 C 12 C P Maximum Power Dissipation W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 28 36 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 5.3 6.5 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 80 C/W. Document Number: 73975 www.vishay.com S12-1959-Rev. E, 13-Aug-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiA421DJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 30 V DS GS D V Temperature Coefficient V /T - 31 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1.5 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 5.3 A 0.029 0.035 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 4.2 A 0.046 0.056 GS D a g V = - 15 V, I = - 5.3 A 15 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 950 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 150 pF oss DS GS C Reverse Transfer Capacitance 120 rss V = - 15 V, V = - 10 V, I = - 7.9 A 19 29 DS GS D Q Total Gate Charge g 10 15 nC Q Gate-Source Charge V = - 15 V, V = - 4.5 V, I = - 7.9 A 3 gs DS GS D Q Gate-Drain Charge 4.5 gd R Gate Resistance f = 1 MHz 1.2 6.5 13 g t Turn-On Delay Time 40 60 d(on) t Rise Time V = - 15 V, R = 2.4 110 165 r DD L I - 6.3 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 25 40 d(off) Fall Time t 12 20 f ns t Turn-On Delay Time 10 15 d(on) Rise Time t 12 20 V = - 15 V, R = 2.4 r DD L I - 6.3 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 30 45 d(off) Fall Time t 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 12 S C A Pulse Diode Forward Current I 35 SM V I = - 6.3 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 20 30 ns rr Q Body Diode Reverse Recovery Charge 15 30 nC rr I = - 6.3 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 12 a ns t Reverse Recovery Rise Time 8 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73975 2 S12-1959-Rev. E, 13-Aug-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000