SiA400EDJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R ( ) Q (Typ.) New Thermally Enhanced PowerPAK I (A) DS DS(on) g D SC-70 Package 0.019 at V = 4.5 V 12 GS - Small Footprint Area 30 11.6 Typical ESD Performance 2500 V HBM 0.025 at V = 2.5 V 12 GS 100 % R and UIS Tested g Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 PowerPAK SC-70-6L-Single APPLICATIONS Load Switch, OVP Switch Boost Converters DC/DC Converters D Marking Code G 2.05 mm A I X 2.05 mm Part code X X X Lot Traceability S and Date code Ordering Information: N-Channel MOSFET SiA400EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 12 GS a T = 25 C C 12 a T = 70 C C 12 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 11 b, c T = 70 C 8.8 A A I Pulsed Drain Current (t = 300 s) 30 DM a T = 25 C C 12 I Continuous Source-Drain Diode Current b, c S T = 25 C A 2.9 I Avalanche Current 15 AS L = 0.1 mH E mJ Single Pulse Avalanche 11.25 AS T = 25 C C 19.2 T = 70 C C 12.3 P Maximum Power Dissipation W D b, c T = 25 C A 3.5 b, c T = 70 C 2.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 28 36 Maximum Junction-to-Ambient thJA C/W R 5.3 6.5 Maximum Junction-to-Case (Drain) Steady State thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. For technical questions, contact: pmostechsupport vishay.com Document Number: 67844 www.vishay.com S13-0787-Rev. B, 15-Apr-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiA400EDJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 34 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3.8 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.6 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 15 A GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V 4.5 V, I = 11 A 0.016 0.019 GS D a R Drain-Source On-State Resistance DS(on) V 2.5 V, I = 9.6 A 0.019 0.025 GS D a g V = 10 V, I = 11 A 50 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1265 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 132 pF oss DS GS C Reverse Transfer Capacitance 80 rss V = 15 V, V = 10 V, I = 10 A 24 36 DS GS D Q Total Gate Charge g 11.6 17.4 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 10 A 2.9 gs DS GS D Q Gate-Drain Charge 2.2 gd Gate Resistance R f = 1 MHz 0.6 3.3 6.6 g t Turn-On Delay Time 10 15 d(on) Rise Time t 23 35 V = 15 V, R = 1.7 r DD L I 8.8 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 26 39 d(off) Fall Time t 918 f ns t Turn-On Delay Time 48 d(on) t Rise Time V = 15 V, R = 1.7 14 21 r DD L I 8.8 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 25 38 d(off) t Fall Time 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 12 S C A I Pulse Diode Forward Current 30 SM V I = 8.8 A, V 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 15 23 ns rr Q Body Diode Reverse Recovery Charge 714 nC rr I = 8.8 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 9 a ns Reverse Recovery Rise Time t 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For technical questions, contact: pmostechsupport vishay.com www.vishay.com Document Number: 67844 2 S13-0787-Rev. B, 15-Apr-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000