X-On Electronics has gained recognition as a prominent supplier of SI9407BDY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI9407BDY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI9407BDY-T1-GE3 Vishay

Hot SI9407BDY-T1-GE3 electronic component of Vishay
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Part No.SI9407BDY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -60V Vds 20V Vgs SO-8
Datasheet: SI9407BDY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3961 ea
Line Total: USD 1.98 
Availability - 4226
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2425
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.4615
5000 : USD 0.4615
7500 : USD 0.4615
10000 : USD 0.4615
12500 : USD 0.4615

322748
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 500
Multiples : 1
500 : USD 0.2423

4226
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 5
Multiples : 5
5 : USD 0.3961
50 : USD 0.3136
150 : USD 0.2782
500 : USD 0.2341
2500 : USD 0.2144
5000 : USD 0.2025

9370
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9856
10 : USD 0.8624
100 : USD 0.6875
500 : USD 0.5654
1000 : USD 0.5269
2500 : USD 0.4972
10000 : USD 0.4873

2242
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.568
5 : USD 1.12
34 : USD 0.5138
92 : USD 0.4858
10000 : USD 0.4774

9700
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.4932
5000 : USD 0.4882
7500 : USD 0.4835

2425
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.8676

2425
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.5239
5000 : USD 0.5187
7500 : USD 0.5135

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI9407BDY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI9407BDY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI9407BDY-T1-GE3 MOSFET is a high-speed SmartFET device from Vishay that features low on-resistance and high maximum current. The device has a break down voltage of up to -60V and gate threshold voltage of 20V. It is housed in an 8-pin SO-8 package. It is designed for high-visibility intelligent power applications such as motor control, telecomms, DC-DC converters, and automotive systems. The device boasts low input capacitance and low gate charge to reduce ringing and maintain stability. The device can be used in a cascode configuration with two devices back to back to reduce losses and improve signal transmission performance.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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