0.8 mm Si8817DB www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET a, e V (V) R () MAX. I (A) Q (Typ.) DS DS(on) D g Small 0.8 mm x 0.8 mm outline area 0.076 at V = -4.5 V -2.9 GS Low 0.4 mm max. profile 0.100 at V = -2.5 V -2.5 GS -20 7.5 nC Material categorization: 0.145 at V = -1.8 V -2.1 GS for definitions of compliance please see 0.320 at V = -1.5 V -0.5 GS www.vishay.com/doc 99912 APPLICATIONS S MICRO FOOT 0.8 x 0.8 S Load switches and chargers switches 22 SS Battery management 33 G DC/DC converters For smart phones and tablet PCs 11 GG 44 1 D D Backside View Bump Side View P-Channel MOSFET Marking Code: xx = AF xxx = Date/Lot traceability code Ordering Information: Si8817DB-T2-E1 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V -20 DS V Gate-Source Voltage V 8 GS a T = 25 C -2.9 A a T = 70 C -2.3 A Continuous Drain Current (T = 150 C) I J D b T = 25 C -2.1 A b T = 70 C -1.7 A A Pulsed Drain Current (t = 300 s) I -15 DM a T = 25 C -0.7 C Continuous Source-Drain Diode Current I S b T = 25 C -0.4 A a T = 25 C 0.9 A a T = 70 C 0.6 A Maximum Power Dissipation P W D b T = 25 C 0.5 A b T = 70 C 0.3 A Operating Junction and Storage Temperature Range T , T -55 to 150 J stg VPR 260 C c Package Reflow Conditions IR/Convection 260 Notes a. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s. b. Surface mounted on 1 x 1 FR4 board with minimum copper, t = 5 s. c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on T = 25 C. A S15-0346-Rev. B, 23-Feb-15 Document Number: 62759 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 xxx xx 0.8 mmSi8817DB www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT a, b Maximum Junction-to-Ambient t = 5 s 105 135 R C/W thJA c, d Maximum Junction-to-Ambient t = 5 s 200 260 Notes a. Surface mounted on 1 x 1 FR4 board with full copper. b. Maximum under steady state conditions is 185 C/W. c. Surface mounted on 1 x 1 FR4 board with minimum copper. d. Maximum under steady state conditions is 330 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -20 - - V DS GS D V Temperature Coefficient V /T --12 - DS DS J I = -250 A mV/C D V Temperature Coefficient V /T -2.5 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = -250 A -0.4 - -1 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V - - 100 nA GSS DS GS V = -20 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -20 V, V = 0 V, T = 70 C - - -10 DS GS J a On-State Drain Current I V -5 V, V = -4.5 V -5 - - A D(on) DS GS V = -4.5 V, I = -1 A - 0.061 0.076 GS D V = -2.5 V, I = -1 A - 0.080 0.100 GS D a Drain-Source On-State Resistance R DS(on) V = -1.8 V, I = -0.5 A - 0.110 0.145 GS D V = -1.5 V, I = -0.5 A - 0.165 0.320 GS D a Forward Transconductance g V = -10 V, I = -1 A - 5 - S fs DS D b Dynamic Input Capacitance C - 615 - iss Output Capacitance C V = -10 V, V = 0 V, f = 1 MHz -90- pF oss DS GS Reverse Transfer Capacitance C -75- rss V = -10 V, V = -8 V, I = -1 A - 12.5 19 DS GS D Total Gate Charge Q g -7.5 12 nC Gate-Source Charge Q V = -10 V, V = -4.5 V, I = -1 A -1- gs DS GS D Gate-Drain Charge Q -1.9- gd Gate Resistance R V = -0.1 V, f = 1 MHz - 14 - g GS Turn-On Delay Time t -20 40 d(on) Rise Time t -20 40 r V = -10 V, R = 10 DD L I -1 A, V = -4.5 V, R = 1 Turn-Off Delay Time t -5D GEN g 2100 d(off) Fall Time t -22 45 f ns Turn-On Delay Time t -6 15 d(on) Rise Time t -10 20 r V = -10 V, R = 10 DD L I -1 A, V = -8 V, R = 1 Turn-Off Delay Time t -6D GEN g 0120 d(off) Fall Time t -23 45 f S15-0346-Rev. B, 23-Feb-15 Document Number: 62759 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000