X-On Electronics has gained recognition as a prominent supplier of SI8810EDB-T2-E1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI8810EDB-T2-E1 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI8810EDB-T2-E1 Vishay

SI8810EDB-T2-E1 electronic component of Vishay
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Part No.SI8810EDB-T2-E1
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 20V .072ohm4.5V 2.9A N-Ch
Datasheet: SI8810EDB-T2-E1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.437 ea
Line Total: USD 0.44 
Availability - 31034
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4543
10 : USD 0.4465
30 : USD 0.439
100 : USD 0.4332

31034
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.437
10 : USD 0.2944
100 : USD 0.1622
1000 : USD 0.1483
3000 : USD 0.1242
9000 : USD 0.123
45000 : USD 0.115

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
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Qg - Gate Charge
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Brand
Forward Transconductance - Min
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Rise Time
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Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI8810EDB-T2-E1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI8810EDB-T2-E1 and other electronic components in the MOSFETs category and beyond.

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0.8 mm Si8810EDB www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET a V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Ultra small 0.8 mm x 0.8 mm outline 0.072 at V = 4.5 V 2.9 GS Ultra thin 0.357 mm height 0.079 at V = 2.5 V 2.8 GS 20 3 nC Typical ESD protection 2000 V (HBM) 0.092 at V = 1.8 V 2.6 GS Material categorization: for definitions of 0.125 at V = 1.5 V 2.2 GS compliance please see www.vishay.com/doc 99912 MICRO FOOT 0.8 x 0.8 APPLICATIONS S D 22 Portable devices such as cell phones, SS 33 smart phones, and tablet PCs - Load switch - Small signal switch G 11 GG - High speed switching 44 1 D Backside View Bump Side View S Marking Code: xx = AJ xxx = Date/Lot traceability code N-Channel MOSFET Ordering Information: Si8810EDB-T2-E1 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 20 DS V Gate-Source Voltage V 8 GS a T = 25 C 2.9 A a T = 70 C 2.3 A Continuous Drain Current (T = 150 C) I J D b T = 25 C 2.1 A b T = 70 C 1.7 A A Pulsed Drain Current (t = 300 s) I 15 DM a T = 25 C 0.7 A Continuous Source-Drain Diode Current I S b T = 25 C 0.4 A a T = 25 C 0.9 A a T = 70 C 0.6 A Maximum Power Dissipation P W D b T = 25 C 0.5 A b T = 70 C 0.3 A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C c Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT a, d Maximum Junction-to-Ambient 105 135 t 5 s R C/W thJA b, e Maximum Junction-to-Ambient 200 260 Notes a. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s. b. Surface mounted on 1 x 1 FR4 board with minimum copper, t = 5 s. c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. d. Maximum under steady state conditions is 185 C/W. e. Maximum under steady state conditions is 330 C/W. S15-0346-Rev. B, 23-Feb-15 Document Number: 62829 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 xxx xx 0.8 mmSi8810EDB www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 20 - - V DS GS D V Temperature Coefficient V /T -21 - DS DS J I = 250 A mV/C D V Temperature Coefficient V /T --2.7- GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.4 - 0.9 V GS(th) DS GS D V = 0 V, V = 4.5 V - - 0.5 DS GS Gate-Source Leakage I GSS V = 0 V, V = 8 V - - 5 DS GS A V = 20 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I DSS V = 20 V, V = 0 V, T = 55 C - - 10 DS GS J a On-State Drain Current I V 5 V, V = 4.5 V 10 - - A D(on) DS GS V = 4.5 V, I = 1 A - 0.058 0.072 GS D V = 2.5 V, I = 1 A - 0.063 0.079 GS D a Drain-Source On-State Resistance R DS(on) V = 1.8 V, I = 1 A - 0.072 0.092 GS D V = 1.5 V, I = 0.5 A - 0.080 0.125 GS D a Forward Transconductance g V = 10 V, I = 1 A - 12 - S fs DS D b Dynamic Input Capacitance C - 245 - iss Output Capacitance C -5V = 10 V, V = 0 V, f = 1 MHz5- pF oss DS GS Reverse Transfer Capacitance C -25- rss V = 10 V, V = 8 V, I = 1 A - 5.2 8 DS GS D Total Gate Charge Q g -3 4.5 nC Gate-Source Charge Q -0V = 10 V, V = 4.5 V, I = 1 A.35- gs DS GS D Gate-Drain Charge Q -0.45- gd Gate Resistance R f = 1 MHz - 5 - g Turn-On Delay Time t -7 15 d(on) Rise Time t -1225 r V = 10 V, R = 10 DD L I 1 A, V = 4.5 V, R = 1 Turn-Off Delay Time t -2D GEN g 550 d(off) Fall Time t -7 15 f ns Turn-On Delay Time t -5 10 d(on) Rise Time t -1020 r V = 10 V, R = 10 DD L I 1 A, V = 8 V, R = 1 Turn-Off Delay Time t -1D GEN g 530 d(off) Fall Time t -7 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - - 0.7 S C A Pulse Diode Forward Current I -- 15 SM Body Diode Voltage V I = 1 A, V = 0 V - 0.7 1.2 V SD S GS Body Diode Reverse Recovery Time t -11 20 ns rr Body Diode Reverse Recovery Charge Q -5 10 nC rr I = 1 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t -7 - a ns Reverse Recovery Rise Time t -4 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-0346-Rev. B, 23-Feb-15 Document Number: 62829 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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