X-On Electronics has gained recognition as a prominent supplier of SI8466EDB-T2-E1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI8466EDB-T2-E1 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI8466EDB-T2-E1 Vishay

SI8466EDB-T2-E1 electronic component of Vishay
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Part No.SI8466EDB-T2-E1
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 8V 5.4A 1.8W 43mOhms 4.5V
Datasheet: SI8466EDB-T2-E1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4554 ea
Line Total: USD 0.46 
Availability - 5202
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1821
9000 : USD 0.1746

523
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3256
10 : USD 0.2826
25 : USD 0.2804
100 : USD 0.2381
250 : USD 0.2357
500 : USD 0.1835

5202
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4554
10 : USD 0.3234
100 : USD 0.2398
500 : USD 0.1958
1000 : USD 0.1837
3000 : USD 0.1573
9000 : USD 0.154
24000 : USD 0.1518

523
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 42
Multiples : 1
42 : USD 0.2804
100 : USD 0.2381
250 : USD 0.2357
500 : USD 0.1835

2910
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1821
9000 : USD 0.1746

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SI8466EDB-T2-E1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI8466EDB-T2-E1 and other electronic components in the MOSFETs category and beyond.

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8466 XXX Si8466EDB Vishay Siliconix N-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a, e V (V) R ( ) Max. Q (Typ.) I (A) DS DS(on) g D Typical ESD protection 3000 V HBM 0.043 at V = 4.5 V Ultra-Small 1 mm x 1 mm maximum Outline 5.4 GS Ultra-Thin 0.548 mm maximum height 0.046 at V = 2.5 V 5.2 GS 8 6.8 nC Material categorization: 0.060 at V = 1.5 V 4.6 GS For definitions of compliance please see 0.090 at V = 1.2 V 3.0 GS www.vishay.com/doc 99912 MICRO FOOT Bump Side View Backside View APPLICATIONS D Low On-Resistance Load Switch for Portable Devices S G 2 1 - Low Power Consumption, Low Voltage Drop - Increased Battery Life G S D 3 4 - Space Savings on PCB Device Marking: 8466 xxx = Date/Lot Traceability Code Ordering Information: S Si8466EDB-T2-E1 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V 8 DS V Gate-Source Voltage V 5 GS a T = 25 C 5.4 A a T = 70 C 4.4 A Continuous Drain Current (T = 150 C) I J D b T = 25 C 3.6 A b T = 70 C 2.9 A A Pulsed Drain Current (t = 300 s) I 20 DM a T = 25 C 1.5 C Continuous Source-Drain Diode Current I S b T = 25 C 0.65 A a T = 25 C 1.8 A a T = 70 C 1.1 A Maximum Power Dissipation P W D b T = 25 C 0.78 A b T = 70 C 0.5 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg VPR 260 C c Package Reflow Conditions IR/Convection 260 Notes: a. Surface mounted on 1 x 1 FR4 board with full copper, t = 10 s. b. Surface mounted on 1 x 1 FR4 board with minimum copper, t = 10 s. c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on T = 25 C. A Document Number: 63683 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S12-2183-Rev. A, 10-Sep-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si8466EDB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, b t = 10 s 55 70 Maximum Junction-to-Ambient R C/W thJA c, d t = 10 s 125 160 Maximum Junction-to-Ambient Notes: a. Surface mounted on 1 x 1 FR4 board with full copper. b. Maximum under steady state conditions is 100 C/W. c. Surface mounted on 1 x 1 FR4 board with minimum copper. d. Maximum under steady state conditions is 190 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 8V DS GS D V Temperature Coefficient V /T 3.5 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.35 0.7 V GS(th) DS GS D I V = 0 V, V = 5 V Gate-Source Leakage 3 A GSS DS GS V = 8 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 8 V, V = 0 V, T = 70 C 10 DS GS J a I V 5 V, V = 4.5 V 10 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 2 A 0.035 0.043 GS D V = 2.5 V, I = 1 A 0.037 0.046 GS D a R Drain-Source On-State Resistance DS(on) V = 1.5 V, I = 1 A 0.045 0.060 GS D V = 1.2 V, I = 0.5 A 0.055 0.090 GS D a g V = 4 V, I = 2 A 30 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 710 iss C V = 4 V, V = 0 V, f = 1 MHz Output Capacitance 270 pF oss DS GS Reverse Transfer Capacitance C 192 rss Q Total Gate Charge 8.5 13 g Gate-Source Charge Q V = 4 V, V = 4.5 V, I = 2 A 0.9 nC gs DS GS D Q Gate-Drain Charge 1.6 gd Gate Resistance R V = 0.1 V, f = 1 MHz 6 g GS t Turn-On Delay Time 10 20 d(on) Rise Time t 15 30 V = 4 V, R = 2 r DD L ns I 2 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 40 80 d(off) Fall Time t 10 20 f www.vishay.com Document Number: 63683 For technical questions, contact: pmostechsupport vishay.com 2 S12-2183-Rev. A, 10-Sep-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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