1 mm Si8497DB www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET d V (V) R ( ) MAX. I (A) Q (TYP.) DS DS(on) D g Ultra-small 1.5 mm x 1 mm maximum outline 0.053 at V = -4.5 V -13 GS Ultra-thin 0.59 mm maximum height -30 0.071 at V = -2.5 V -11 16.3 nC GS 0.120 at V = -2 V -5 Material categorization: GS for definitions of compliance please see www.vishay.com/doc 99912 MICRO FOOT 1.5 x 1 S 2 S 3 APPLICATIONS S D 4 Low on-resistance load switch, charger switch, OVP switch and 1 battery switch for portable devices G G 6 - Low power consumption S 5 1 - Increased battery life D Backside View Bump Side View - Space savings on PCB Marking Code: xxxx = 8497 xxx = Date / lot traceability code D Ordering Information: P-Channel MOSFET Si8497DB-T2-E1 (Lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V -30 DS V Gate-Source Voltage V 12 GS T = 25 C -13 C T = 70 C -10 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C -5.9 A a, b T = 70 C -4.7 A A Pulsed Drain Current (t = 300 s) I -20 DM T = 25 C -11 C Continuous Source-Drain Diode Current I S a, b T = 25 C -2.3 A T = 25 C 13 C T = 70 C 8.4 C Maximum Power Dissipation P W D a, b T = 25 C 2.77 A a, b T = 70 C 1.77 A Operating Junction and Storage Temperature Range T , T -55 to 150 J stg C c Package Reflow Conditions IR/Convection 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT a, e Maximum Junction-to-Ambient R 37 45 thJA C/W f Maximum Junction-to-Case (Drain) Steady State R 79.5 thJC Notes a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. d. Based on T = 25 C. C e. Maximum under steady state conditions is 85 C/W. f. Case is defined as top surface of the package. S15-0932-Rev. B, 20-Apr-15 Document Number: 63355 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 xxxx xxx 1.5 mmSi8497DB www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = -250 A -30 - - V DS GS D V Temperature Coefficient V /T --29 - DS DS J I = -250 A mV/C D V Temperature Coefficient V /T -3.1 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = -250 A -0.5 - -1.1 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 12 V - - 100 nA GSS DS GS V = -30 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -30 V, V = 0 V, T = 70 C - - -10 DS GS J a On-State Drain Current I V -5 V, V = -4.5 V -5 - - A D(on) DS GS V = -4.5 V, I = -1.5 A - 0.043 0.053 GS D a Drain-Source On-State Resistance R V = -2.5 V, I = -1 A - 0.058 0.071 DS(on) GS D V = -2 V, I = -0.5 A - 0.075 0.120 GS D a Forward Transconductance g V = -15 V, I = -1.5 A - 10 - S fs DS D b Dynamic Input Capacitance C - 1320 - iss Output Capacitance C V = -15 V, V = 0 V, f = 1 MHz - 121 - pF oss DS GS Reverse Transfer Capacitance C -102- rss V = -15 V, V = -10 V, I = -1.5 A - 32.6 49 DS GS D Total Gate Charge Q g - 16.3 25 nC Gate-Source Charge Q V = -15 V, V = -4.5 V, I = -1.5 A -2.5 - gs DS GS D Gate-Drain Charge Q -4.9- gd Gate Resistance R V = -0.1 V, f = 1 MHz - 8 - g GS Turn-On Delay Time t -17 35 d(on) Rise Time t -15 30 r V = -15 V, R = 10 DD L I -1.5 A, V = -4.5 V, R = 1 Turn-Off Delay Time t -D GEN g60120 d(off) Fall Time t -25 50 f ns Turn-On Delay Time t - 50 100 d(on) Rise Time t -10 20 r V = -15 V, R = 10 DD L I -1.5 A, V = -10 V, R = 1 Turn-Off Delay Time t -D GEN g 75150 d(off) Fall Time t -22 45 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - - -15 S C A Pulse Diode Forward Current I -- -20 SM Body Diode Voltage V I = -1.5 A, V = 0 - -0.73 -1.2 V SD S GS Body Diode Reverse Recovery Time t -21 40 ns rr Body Diode Reverse Recovery Charge Q - 7 15 nC rr I = -1.5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t -8- a ns Reverse Recovery Rise Time t -13- b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-0932-Rev. B, 20-Apr-15 Document Number: 63355 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000