X-On Electronics has gained recognition as a prominent supplier of SI8802DB-T2-E1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI8802DB-T2-E1 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI8802DB-T2-E1 Vishay

SI8802DB-T2-E1 electronic component of Vishay
SI8802DB-T2-E1 Vishay
SI8802DB-T2-E1 MOSFETs
SI8802DB-T2-E1  Semiconductors

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See Product Specifications
Part No. SI8802DB-T2-E1
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
Datasheet: SI8802DB-T2-E1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2469 ea
Line Total: USD 0.25 
Availability - 521
Ship by Fri. 10 Jan to Wed. 15 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
521
Ship by Fri. 10 Jan to Wed. 15 Jan
MOQ : 1
Multiples : 1
1 : USD 0.2469
10 : USD 0.1885
30 : USD 0.1589
100 : USD 0.13
500 : USD 0.1119
1000 : USD 0.1028

8619
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 0.539
10 : USD 0.3047
100 : USD 0.176
1000 : USD 0.1584
3000 : USD 0.1265
9000 : USD 0.1254
24000 : USD 0.1221
45000 : USD 0.121

2871
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 294
Multiples : 1
294 : USD 0.221
1000 : USD 0.2145

2910
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1792

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI8802DB-T2-E1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI8802DB-T2-E1 and other electronic components in the MOSFETs category and beyond.

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The Vishay SI8802DB-T2-E1 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) packaged in an ultra-small micro-foot (also known as a SuperSOT) measuring 0.8 x 0.8 mm. This device is ideal for use in high-frequency, low-power applications where board space is at a premium, such as in portable consumer electronics. It features excellent thermal performance and has a Vds (drain-to-source voltage) rating of 8V and a Vgs (gate-to-source voltage) rating of 5V. It has a maximum junction temperature of 175°C and a maximum continuous drain current of 220mA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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