X-On Electronics has gained recognition as a prominent supplier of SI8802DB-T2-E1 MOSFET across the USA, India, Europe, Australia, and various other global locations. SI8802DB-T2-E1 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SI8802DB-T2-E1 Vishay

SI8802DB-T2-E1 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SI8802DB-T2-E1
Manufacturer: Vishay
Category: MOSFET
Description: MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
Datasheet: SI8802DB-T2-E1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5049 ea
Line Total: USD 0.5

Availability - 7684
Ship by Wed. 07 Aug to Fri. 09 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2871
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 0.6354
10 : USD 0.2271
25 : USD 0.2248
50 : USD 0.2226
100 : USD 0.2203
250 : USD 0.2181
500 : USD 0.2159
1000 : USD 0.1466

1776
Ship by Thu. 08 Aug to Tue. 13 Aug
MOQ : 1
Multiples : 1
1 : USD 0.3388
10 : USD 0.282
30 : USD 0.2532
100 : USD 0.2252
500 : USD 0.2082
1000 : USD 0.1995

7684
Ship by Wed. 07 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 0.5049
10 : USD 0.3565
100 : USD 0.2196
1000 : USD 0.1541
3000 : USD 0.1426
9000 : USD 0.1323
24000 : USD 0.1323
45000 : USD 0.1277
99000 : USD 0.1265

2871
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 1000
Multiples : 1
1000 : USD 0.1466

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI8802DB-T2-E1 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI8802DB-T2-E1 and other electronic components in the MOSFET category and beyond.

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The Vishay SI8802DB-T2-E1 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) packaged in an ultra-small micro-foot (also known as a SuperSOT) measuring 0.8 x 0.8 mm. This device is ideal for use in high-frequency, low-power applications where board space is at a premium, such as in portable consumer electronics. It features excellent thermal performance and has a Vds (drain-to-source voltage) rating of 8V and a Vgs (gate-to-source voltage) rating of 5V. It has a maximum junction temperature of 175°C and a maximum continuous drain current of 220mA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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