X-On Electronics has gained recognition as a prominent supplier of SI9407BDY-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI9407BDY-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI9407BDY-T1-E3 Vishay

SI9407BDY-T1-E3 electronic component of Vishay
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Part No.SI9407BDY-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V 4.7A 5.0W 120mohm @ 10V
Datasheet: SI9407BDY-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.468 ea
Line Total: USD 1170 
Availability - 4850
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
806
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7384
10 : USD 0.7047
25 : USD 0.7001
100 : USD 0.6816
250 : USD 0.6633
500 : USD 0.6448

2425
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.6139

4850
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.468
5000 : USD 0.468
7500 : USD 0.468
10000 : USD 0.468
12500 : USD 0.468

852
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7996
500 : USD 0.6985

77696
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8283
10 : USD 0.8217
100 : USD 0.6666
500 : USD 0.5852
1000 : USD 0.5445
2500 : USD 0.5269
5000 : USD 0.5269
10000 : USD 0.5071
25000 : USD 0.5005

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI9407BDY-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI9407BDY-T1-E3 and other electronic components in the MOSFETs category and beyond.

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New Product Si9407BDY Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.120 at V = - 10 V - 4.7 GS TrenchFET Power MOSFET - 60 8 nC 0.150 at V = - 4.5 V - 4.2 GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch SO-8 S SD 1 8 SD 2 7 G SD 3 6 GD 4 5 Top View D Ordering Information: Si9407BDY-T1-E3 (Lead (Pb)-free) Si9407BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage - 60 DS V Gate-Source Voltage V 20 GS T = 25 C - 4.7 C T = 70 C - 3.8 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 3.2 b, c T = 70 C A - 2.6 A Pulsed Drain Current (10 s Width) I - 20 DM T = 25 C - 4.2 C I Continuous Source-Drain Diode Current S b, c T = 25 C A - 2 Avalanche Current I - 15 AS L = 0.1 mH Single-Pulse Avalanche Energy E 11 mJ AS T = 25 C 5 C T = 70 C 3.2 C P Maximum Power Dissipation W D b, c T = 25 C A 2.4 b, c T = 70 C A 1.5 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R 42 53 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 19 25 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 C/W. Document Number: 69902 www.vishay.com S09-0704-Rev. B, 27-Apr-09 1New Product Si9407BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 60 V DS GS D V Temperature Coefficient V /T - 50 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 60 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 60 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 3.2 A 0.100 0.120 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 2.9 A 0.126 0.150 GS D a g V = - 15 V, I = - 3.2 A 8.5 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 600 iss Output Capacitance C V = - 30 V, V = 0 V, f = 1 MHz 70 pF oss DS GS C Reverse Transfer Capacitance 50 rss V = - 30 V, V = - 10 V, I = - 3.2 A 14.5 22 DS GS D Q Total Gate Charge g 812 nC Q Gate-Source Charge V = - 30 V, V = - 4.5 V, I = - 3.9 A 2.2 gs DS GS D Q Gate-Drain Charge 3.7 gd R Gate Resistance f = 1 MHz 14 g t Turn-On Delay Time 30 45 d(on) t Rise Time V = - 30 V, R = 11.5 70 105 r DD L ns I - 2.6 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 40 60 d(off) Fall Time t 30 45 f t Turn-On Delay Time 10 15 d(on) Rise Time t 13 20 V = - 30 V, R = 11.5 r DD L ns I - 2.6 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 35 55 d(off) Fall Time t 30 45 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 4.2 S C A I Pulse Diode Forward Current - 20 SM V I = - 2 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 30 50 ns rr Q Body Diode Reverse Recovery Charge 35 60 nC rr I = - 2 A, dI/dt = - 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 16 a ns t Reverse Recovery Rise Time 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69902 2 S09-0704-Rev. B, 27-Apr-09

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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