New Product Si9407BDY Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.120 at V = - 10 V - 4.7 GS TrenchFET Power MOSFET - 60 8 nC 0.150 at V = - 4.5 V - 4.2 GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch SO-8 S SD 1 8 SD 2 7 G SD 3 6 GD 4 5 Top View D Ordering Information: Si9407BDY-T1-E3 (Lead (Pb)-free) Si9407BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage - 60 DS V Gate-Source Voltage V 20 GS T = 25 C - 4.7 C T = 70 C - 3.8 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 3.2 b, c T = 70 C A - 2.6 A Pulsed Drain Current (10 s Width) I - 20 DM T = 25 C - 4.2 C I Continuous Source-Drain Diode Current S b, c T = 25 C A - 2 Avalanche Current I - 15 AS L = 0.1 mH Single-Pulse Avalanche Energy E 11 mJ AS T = 25 C 5 C T = 70 C 3.2 C P Maximum Power Dissipation W D b, c T = 25 C A 2.4 b, c T = 70 C A 1.5 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R 42 53 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 19 25 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 C/W. Document Number: 69902 www.vishay.com S09-0704-Rev. B, 27-Apr-09 1New Product Si9407BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 60 V DS GS D V Temperature Coefficient V /T - 50 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 60 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 60 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 3.2 A 0.100 0.120 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 2.9 A 0.126 0.150 GS D a g V = - 15 V, I = - 3.2 A 8.5 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 600 iss Output Capacitance C V = - 30 V, V = 0 V, f = 1 MHz 70 pF oss DS GS C Reverse Transfer Capacitance 50 rss V = - 30 V, V = - 10 V, I = - 3.2 A 14.5 22 DS GS D Q Total Gate Charge g 812 nC Q Gate-Source Charge V = - 30 V, V = - 4.5 V, I = - 3.9 A 2.2 gs DS GS D Q Gate-Drain Charge 3.7 gd R Gate Resistance f = 1 MHz 14 g t Turn-On Delay Time 30 45 d(on) t Rise Time V = - 30 V, R = 11.5 70 105 r DD L ns I - 2.6 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 40 60 d(off) Fall Time t 30 45 f t Turn-On Delay Time 10 15 d(on) Rise Time t 13 20 V = - 30 V, R = 11.5 r DD L ns I - 2.6 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 35 55 d(off) Fall Time t 30 45 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 4.2 S C A I Pulse Diode Forward Current - 20 SM V I = - 2 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 30 50 ns rr Q Body Diode Reverse Recovery Charge 35 60 nC rr I = - 2 A, dI/dt = - 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 16 a ns t Reverse Recovery Rise Time 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69902 2 S09-0704-Rev. B, 27-Apr-09