Si9435BDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) r ( ) I (A) DS DS(on) D 0.042 V = 10 V 5.7 GS 30 0.055 V = 6 V 5.0 GS 0.070 V = 4.5 V 4.4 GS S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top View D Ordering Information: Si9435BDY P-Channel MOSFET Si9435BDY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T = 25 C UNLESS OTHERWISE NOTED) A Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage V 30 DS VV Gate-Source Voltage V GS 20 T = 25 C 4.1 5.7 A aa Continuous Drain CurrentContinuous Drain Current (T(T == 150 150 C)C) II JJ DD T = 70 C 4.6 3.2 A AA Pulsed Drain Current I 30 DM a continuous Source Current (Diode Conduction) I 2.3 1.1 S T = 25 C 2.5 1.3 A aa Maximum Power DissipationMaximum Power Dissipation PP WW DD T = 70 C 1.6 0.8 A Operating Junction and Storage Temperature Range T , T 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 sec 40 50 aa Maximum Junction-to-AmbientMi J ti t A bi t RR thJA Steady State 70 95 C/WC/W Maximum Junction-to-Foot (Drain) Steady State R 24 30 thJF Notes a. Surface Mounted on 1 x 1 FR4 Board. Document Number: 72245 www.vishay.com S-32274Rev. B, 03-Nov-03 1Si9435BDY New Product Vishay Siliconix SPECIFICATIONS (T = 25 C UNLESS OTHERWISE NOTED) J a Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage V V = V , I = 250 A 1.0 3.0 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate VZero Gate Voltage Drain Currentoltage Drain Current II AA DSDSSS V = 30 V, V = 0 V, T = 70 C 5 DS GS J V 10 V, V = 10 V 20 DS GS bb OnOn-State Drain CurrentState Drain Current II AA D(D(on)) V 5 V, V = 4.5 V 5 DS GS V = 10 V, I = 5.7 A 0.033 0.042 GS D b Drain-Source On-State Resistance r 0.043 0.055 DS(on) V = 6 V, I = 5 A GS D V = 4.5 V, I = 4.4 A 0.056 0.070 GS D b Forward Transconductance g V = 15 V, I = 5.7 A 13 S fs DS D b Diode Forward Voltage V I = 2.3 A, V = 0 V 0.8 1.1 V SD S GS a Dynamic Total Gate Charge Q 16 24 g Gate-Source Charge Q V = 15 V, V = 10 V, I = 3.5 A 2.3 nC gs DS GS D Gate-Drain Charge Q 4.5 gd Gate Resistance R 8.8 g Turn-On Delay Time t 14 25 d(on) Rise Time t 14 25 r VV = = 15 V15 V,, R R = 15 = 15 DDDD LL I 1 A, V = 10 V, R = 6 D GEN G Turn-Off Delay Time t 42 70 d(off) ns Fall Time t 30 50 f Source-Drain Reverse Recovery Time t I = 1.2 A, di/dt = 100 A/ s 30 60 rr F Notes a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2%. Document Number: 72245 www.vishay.com S-32274Rev. B, 03-Nov-03 2