Si9926BDY New Product Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V (V) r ()I (A) DS DS(on) D Pb-free 0.020 at V = 4.5 V 8.2 GS Available 20 0.030 at V = 2.5 V 6.7 GS RoHS* COMPLIANT SO-8 D D 1 2 S D 1 8 1 1 G D 1 2 7 1 S D 3 6 2 2 G G 1 2 G D 2 4 5 2 Top View S S 1 2 Ordering Information: Si9926BDY-T1 N-Channel MOSFET N-Channel MOSFET Si9926BDY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 sec Steady State Unit V Drain-Source Voltage 20 DS V Gate-Source Voltage V 12 GS T = 25 C 8.2 6.2 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 6.5 4.9 A A I Pulsed Drain Current 30 DM a I 1.7 0.95 Continuous Source Current (Diode Conduction) S T = 25 C 2.0 1.14 A a P W Maximum Power Dissipation D T = 70 C 1.3 0.72 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 sec 52 62.5 a R Maximum Junction-to-Ambient thJA Steady State 90 110 C/W Maximum Junction-to-Foot (Drain) Steady State R 32 40 thJF Notes: a. Surface Mounted on 1 x 1 FR4 Board. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72278 www.vishay.com S-61006-Rev. B, 12-Jun-06 1Si9926BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min TypMaxUnit Static V V = V , I = 250 A Gate Threshold Voltage 0.6 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Body Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 4.5 V 30 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 8.2 A 0.016 0.020 GS D a r Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 3.3 A 0.024 0.030 GS D a g V = 15 V, I = 8.2 A 29 S Forward Transconductance fs DS D a V I = 1.7 A, V = 0 V 0.8 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 11 20 g Q V = 10 V, V = 4.5 V, I = 8.2 A Gate-Source Charge 2.5 nC gs DS GS D Gate-Drain Charge Q 3.2 gd t Turn-On Delay Time 35 55 d(on) Rise Time t 50 75 V = 10 V, R = 10 r DD L I 1 A, V = 4.5 V, R = 6 t Turn-Off Delay Time D GEN G 31 50 ns d(off) Fall Time t 15 25 f t I = 1.7 A, di/dt = 100 A/s Source-Drain Reverse Recovery Time 30 60 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C unless noted 30 30 V = 5 thru 3 V GS 2.5 V 25 25 20 20 15 15 2 V 10 10 T = 125 C C 5 5 25 C 1.5 V - 55 C 0 0 0 1234 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) GS DS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72278 2 S-61006-Rev. B, 12-Jun-06 I - Drain Current (A) D I - Drain Current (A) D