Si9936BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.035 at V = 10 V 6.0 GS Compliant to RoHS Directive 2002/95/EC 30 0.052 at V = 4.5 V 4.9 GS D 1 D 2 SO-8 S D 1 1 8 1 G D 1 2 7 1 G 1 G 2 S D 2 3 6 2 G D 4 5 2 2 Top View S 1 S 2 Ordering Information: Si9936BDY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si9936BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 20 GS T = 25 C 6.0 4.5 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 4.8 3.6 A A I Pulsed Drain Current 40 DM a I 1.7 0.9 Continuous Source Current (Diode Conduction) S T = 25 C 2.0 1.1 A a P W Maximum Power Dissipation D T = 70 C 1.3 0.7 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 53 62.5 a R Maximum Junction-to-Ambient thJA Steady State 92 110 C/W Maximum Junction-to-Foot (Drain) Steady State R 30 40 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72521 www.vishay.com S09-0704-Rev. C, 27-Apr-09 1Si9936BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1.0 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 40 A On-State Drain Current D(on) DS GS V = 10 V, I = 6 A 0.028 0.035 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 4.9 A 0.041 0.052 GS D a g V = 15 V, I = 6 A 12 S Forward Transconductance fs DS D a V I = 1.7 A, V = 0 V 0.8 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 8.6 13 g Q V = 15 V, V = 10 V, I = 6 A Gate-Source Charge 1.8 nC gs DS GS D Gate-Drain Charge Q 1.5 gd R Gate Resistance f = 1 MHz 2.8 g Turn-On Delay Time t 10 15 d(on) t Rise Time V = 15 V, R = 15 15 25 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 25 40 ns D GEN g d(off) t Fall Time 10 15 f Source-Drain Reverse Recovery Time t I = 1.7 A, dI/dt = 100 A/s 20 40 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 40 V = 10 V thru 6 V GS T = - 55 C C 35 35 5 V 25 C 30 30 125 C 25 25 20 20 4 V 15 15 10 10 5 5 3 V 0 0 0 123 456 0 1234 5 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) GS DS Transfer Characteristics Output Characteristics www.vishay.com Document Number: 72521 2 S09-0704-Rev. C, 27-Apr-09 I - Drain Current (A) D I - Drain Current (A) D