SiA408DJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( )I (A) Q (Typ.) Definition DS DS(on) D g TrenchFET Power MOSFET 0.036 at V = 10 V 4.5 GS New Thermally Enhanced PowerPAK 30 0.039 at V = 4.5 V 4.5 7 nC GS SC-70 Package 0.053 at V = 2.5 V 4.5 GS - Small Footprint Area Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Applications DC/DC Converter PowerPAK SC-70-6L-Single D 1 D 2 Marking Code D 3 A E X G G Part code D X X X 6 Lot Traceability D S 5 and Date code 2.05 mm S S 2.05 mm 4 Ordering Information: SiA408DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 12 GS a T = 25 C 4.5 C a T = 70 C 4.5 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C 4.5 A b, c T = 70 C A 4.5 A I Pulsed Drain Current 20 DM a T = 25 C 4.5 C Continuous Source-Drain Diode Current I b, c S T = 25 C 2.8 A T = 25 C 17.9 C T = 70 C 11.4 C Maximum Power Dissipation P W D b, c T = 25 C 3.4 A b, c T = 70 C 2.2 A , T Operating Junction and Storage Temperature Range T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f Maximum Junction-to-Ambient t 5 s R 29 37 thJA C/W R 5.5 7 Maximum Junction-to-Case (Drain) Steady State thJC Notes: a. Package limited b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. Document Number: 69255 www.vishay.com S10-2546-Rev. D, 08-Nov-10 1SiA408DJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 30 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 4 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.6 1.6 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I DSS A V = 30 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 20 A D(on) DS GS V 10 V, I = 5.3 A 0.030 0.036 GS D a Drain-Source On-State Resistance R V 4.5 V, I = 5.1 A 0.032 0.039 DS(on) GS D V 2.5 V, I = 2.5 A 0.040 0.053 GS D a Forward Transconductance g V = 10 V, I = 5.3 A 20 S fs DS D b Dynamic Input Capacitance C 830 iss Output Capacitance C 130V = 15 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 60 rss V = 15 V, V = 10 V, I = 7.8 A 16 24 DS GS D Total Gate Charge Q g 711 nC Gate-Source Charge Q 2V = 15 V, V = 4.5 V, I = 7.8 A gs DS GS D Gate-Drain Charge Q 1.7 gd Gate Resistance R f = 1 MHz 0.6 3 6 g Turn-On Delay Time t 10 15 d(on) Rise Time t 1015 V = 15 V, R = 2.4 r DD L I 6.2 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 35D GEN g 55 d(off) Fall Time t 15 25 f ns 10 15 Turn-On Delay Time t d(on) Rise Time t 1015 r V = 15 V, R = 2.4 DD L I 6.2 A, V = 10 V, R = 1 Turn-Off Delay Time t 20D GEN g 30 d(off) Fall Time t 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 4.5 S C A Pulse Diode Forward Current I 20 SM Body Diode Voltage V I = 6.2 A, V 0 V 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t 20 40 ns rr Body Diode Reverse Recovery Charge Q 15 30 nC rr I = 6.2 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 13 a ns Reverse Recovery Rise Time t 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69255 2 S10-2546-Rev. D, 08-Nov-10