New Product SiA411DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET a 0.030 at V = - 4.5 V - 12 GS New Thermally Enhanced PowerPAK RoHS a 0.041 at V = - 2.5 V COMPLIANT GS - 12 SC-70 Package - 20 15 nC a 0.056 at V = - 1.8 V - Small Footprint Area GS - 12 - Low On-Resistance 0.150 at V = - 1.5 V GS - 2 APPLICATIONS PowerPAK SC-70-6L-Single Load Switch, PA Switch and Battery Switch for Portable Devices S 1 D Marking Code 2 D B E X 3 G Part code G D X X X 6 Lot Traceability S D and Date code 5 2.05 mm S 2.05 mm 4 D Ordering Information: SiA411DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage - 20 DS V Gate-Source Voltage V 8 GS a T = 25 C - 12 C a T = 70 C C - 12 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 8.8 A b, c T = 70 C A - 7 A I Pulsed Drain Current - 20 DM a T = 25 C - 12 C I Continuous Source-Drain Diode Current S b, c T = 25 C - 2.9 A T = 25 C 19 C T = 70 C 12 C P Maximum Power Dissipation W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 5 s 28 36 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 5.3 6.5 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (New Product SiA411DJ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 19.5 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.3 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 5.9 A 0.025 0.030 GS D V = - 2.5 V, I = - 5.0 A 0.033 0.041 GS D a R Drain-Source On-State Resistance DS(on) V = - 1.8 V, I = - 1.8 A 0.045 0.056 GS D V = - 1.5 V, I = - 0.7 A 0.075 0.150 GS D a g V = - 10 V, I = - 5.9 A 21 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1200 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 210 pF oss DS GS C Reverse Transfer Capacitance 155 rss V = - 10 V, V = - 8 V, I = - 8.8 A 25 38 DS GS D Q Total Gate Charge g 15 23 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 8.8 A 2.5 gs DS GS D Q Gate-Drain Charge 4 gd R Gate Resistance f = 1 MHz 5 g t Turn-On Delay Time 12 20 d(on) Rise Time t 65 100 V = - 10 V, R = 1.4 r DD L I - 7 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 40 60 d(off) Fall Time t 100 150 f ns t Turn-On Delay Time 510 d(on) Rise Time t 25 35 V = - 10 V, R = 1.4 r DD L I - 7 A, V = - 8 V, R = 1 t Turn-Off Delay Time D GEN g 40 60 d(off) t Fall Time 12 20 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 12 S C A I Pulse Diode Forward Current 20 SM V I = - 7 A, V = 0 V Body Diode Voltage - 0.85 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 20 40 ns rr Q Body Diode Reverse Recovery Charge 10 20 nC rr I = - 7 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 13 a ns t Reverse Recovery Rise Time 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74464 2 S-80435-Rev. C, 03-Mar-08