New Product Si9933CDY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES Halogen-free Option Available PRODUCT SUMMARY TrenchFET Power MOSFET a, e V (V) R () Q (Typ.) I (A) DS DS(on) g D 100 % R and UIS Tested RoHS g 0.058 at V = - 4.5 V - 4 COMPLIANT GS - 20 8 0.094 at V = - 2.5 V - 4 APPLICATIONS GS Load Switch DC/DC Converter S S 1 2 SO-8 S D 1 1 8 1 G D 2 7 1 1 G G 1 2 S D 2 3 6 2 G D 2 4 5 2 Top View D D 1 2 Ordering Information: Si9933CDY-T1-E3 (Lead (Pb)-free) Si9933CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 20 DS V V Gate-Source Voltage 12 GS e T = 25 C - 4 C e T = 70 C - 4 C Continuous Drain Current (T = 150 C) I J D b, c, e T = 25 C - 4 A b, c T = 70 C - 3.8 A A I - 20 Pulsed Drain Current (10 s Pulse Width) DM T = 25 C - 2.5 C I Source-Drain Current Diode Current S b, c T = 25 C - 1.7 A I - 6 Single Pulse Avalanche Current AS L = 0.1 mH E Single-Pulse Avalanche Energy 1.8 mJ AS T = 25 C 3.1 C T = 70 C 2 C P Maximum Power Dissipation W D b, c T = 25 C 2 A b, c T = 70 C A 1.28 Operating Junction and Storage Temperature Range T , T - 50 to 150 C J stg THERMAL RESISTANCE RATINGS Limit Parameter Symbol Typical Maximum Unit b, d R t 10 s 52 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 32 40 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 C/W. e. Package Limited. Document Number: 68791 www.vishay.com S-81729-Rev. A, 04-Aug-08 1New Product Si9933CDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 19 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3.1 GS(th) GS(th) J V V = V , I = - 250 A Gate Threshold Voltage - 0.6 - 1.4 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Body Leakage - 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J b I V = - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 4.8 A 0.048 0.058 GS D b R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 1 A 0.075 0.094 GS D b g V = - 10 V, I = - 4.8 A 11 S Forward Transconductance fs DS D a Dynamic C Input Capacitance 665 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 140 pF oss DS GS C Reverse Transfer Capacitance 115 rss V = - 10 V, V = - 10 V, I = - 4.8 A 17 26 DS GS D Q Total Gate Charge g 812 nC Q V = - 10 V, V = - 4.5 V, I = - 4.8 A Gate-Source Charge 2 gs DS GS D Q Gate-Drain Charge 3 gd R Gate Resistance f = 1 MHz 1.2 6 12 g t Turn-On Delay Time 612 d(on) t V = - 10 V, R = 2.6 Rise Time 15 23 r DD L t I - 3.8 A, V = - 10 V, R = 1 Turn-Off Delay Time 26 39 d(off) D GEN g t Fall Time 918 f ns t Turn-On Delay Time 21 32 d(on) t V = - 10 V, R = 2.6 Rise Time 50 75 r DD L t I - 3.8 A, V = - 4.5 V, R = 1 Turn-Off Delay Time 29 44 d(off) D GEN g t Fall Time 13 20 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 2.5 S C A a I - 20 Pulse Diode Forward Current SM V I = - 3.8 A Body Diode Voltage - 0.77 - 1.2 V SD S t Body Diode Reverse Recovery Time 30 45 ns rr Q Body Diode Reverse Recovery Charge 17 26 nC rr I = - 3.8 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 16 a ns t Reverse Recovery Rise Time 14 b Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68791 2 S-81729-Rev. A, 04-Aug-08