X-On Electronics has gained recognition as a prominent supplier of SI9945BDY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI9945BDY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI9945BDY-T1-GE3 Vishay

SI9945BDY-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI9945BDY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V 5.3A 3.1W 58mohm @ 10V
Datasheet: SI9945BDY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6711 ea
Line Total: USD 0.67 
Availability - 1080
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7275
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.4485
5000 : USD 0.442
7500 : USD 0.442
10000 : USD 0.4355
12500 : USD 0.429

1080
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 0.6711
10 : USD 0.5466
30 : USD 0.4852
100 : USD 0.4219
500 : USD 0.3854
1000 : USD 0.3662

11211
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.882
5 : USD 0.8316
25 : USD 0.693
69 : USD 0.6552
500 : USD 0.6496

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Series
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
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Taric
Typical Turn-On Delay Time
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We are delighted to provide the SI9945BDY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI9945BDY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI9945BDY-T1-GE3 is a Silicon N-Channel Metal Oxide Semiconductor (MOSFET) from Vishay Semiconductor. It has an extremely low on-state resistance of 8.5 mO and provides high switching speeds as well as low gate drive power. It is designed for use in high-speed applications such as high frequency DC/DC converters. The SI9945BDY-T1-GE3 is housed in an ultra-small VMC24 package, which makes it ideal for space-sensitive designs. In addition, it has an avalanche capability of 350A and a maximum drain source voltage of 25V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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