New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition TrenchFET Power MOSFET 0.018 at V = 4.5 V 8 GS 20 10 nC 100 % UIS Tested 0.022 at V = 2.5 V 8 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter - Game Machine SO-8 - PC D 1 D D 2 S 1 8 1 1 G D 2 7 1 1 D S 3 6 2 2 G D 2 4 5 2 G 1 G 2 Top View S S 1 2 Ordering Information: Si9926CDY-T1-E3 (Lead (Pb)-free) Si9926CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 12 GS a T = 25 C 8 C a T = 70 C 8 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C 8 A b, c T = 70 C 6.7 A A Pulsed Drain Current I 30 DM T = 25 C 2.6 C I Continuous Source-Drain Diode Current S b, c T = 25 C 1.7 A Single Pulse Avalanche Current I 5 AS L = 0.1 mH Single Pulse Avalanche Energy E mJ 1.25 AS T = 25 C 3.1 C T = 70 C 2 C P Maximum Power Dissipation W D b, c T = 25 C 2 A b, c T = 70 C 1.3 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, c, d t 10 s R 50 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 32 40 thJF Notes: a. Package limited, T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 C/W. Document Number: 68606 www.vishay.com S09-0704-Rev. B, 27-Apr-09 1New Product Si9926CDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V Temperature Coefficient V /T 25 DS DS J I = 250 A D mV/C V Temperature Coefficient V /T - 4.0 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.6 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I DSS A V = 20 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 30 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 8.3 A 0.015 0.018 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 4.5 A 0.017 0.022 GS D a g V = 10 V, I = 8.3 A 45 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1200 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 220 pF oss DS GS C Reverse Transfer Capacitance 100 rss V = 10 V, V = 10 V, I = 8.3 A 22 33 DS GS D Q Total Gate Charge g 10 15 nC Q Gate-Source Charge V = 10 V, V = 4.5 V, I = 8.3 A 2.5 gs DS GS D Q Gate-Drain Charge 1.7 gd Gate Resistance R f = 1 MHz 2.4 g t Turn-on Delay Time 15 25 d(on) Rise Time t 10 15 V = 10 V, R = 1.5 r DD L I 6.7 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 35 55 d(off) Fall Time t 12 20 f ns t Turn-on Delay Time 10 15 d(on) Rise Time t 12 20 V = 10 V, R = 1.5 r DD L I 6.7 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 25 40 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 2.6 S C A I Pulse Diode Forward Current 30 SM V I = 6.7 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 20 40 ns rr Q Body Diode Reverse Recovery Charge 10 20 nC rr I = 6.7 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 10 a ns t Reverse Recovery Rise Time 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68606 2 S09-0704-Rev. B, 27-Apr-09