New Product SiA415DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free V (V) R ()I (A) Q (Typ) DS DS(on) D g TrenchFET Power MOSFET a 0.035 at V = - 4.5 V - 12 GS - 20 15 nC New Thermally Enhanced PowerPAK RoHS a 0.051 at V = - 2.5 V COMPLIANT GS - 12 SC-70 Package - Small Footprint Area - Low On-Resistance APPLICATIONS PowerPAK SC-70-6L-Single Load Switch, PA Switch and Battery Switch for Portable Devices S 1 D 2 Marking Code D G 3 G B G X D Part code 6 X X X S D Lot Traceability 5 and Date code S 2.05 mm 2.05 mm 4 D Ordering Information: SiA415DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V V Gate-Source Voltage 12 GS a T = 25 C - 12 C a T = 70 C - 12 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 8.4 A b, c T = 70 C A - 6.7 A I Pulsed Drain Current - 30 DM a T = 25 C - 12 C I Continuous Source-Drain Diode Current S b, c T = 25 C - 2.9 A T = 25 C 19 C T = 70 C 12 C P Maximum Power Dissipation W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 28 36 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 5.3 6.5 thJC Notes: a. Package limited b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (New Product SiA415DJ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min TypMaxUnit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 20 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3.5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.6 - 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 5.6 A 0.029 0.035 GS D a R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 2 A 0.042 0.051 GS D a g V = - 10 V, I = - 5.6 A 20 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1250 iss Output Capacitance C V = - 10 V, V = 0 V, f = 1 MHz 250 pF oss DS GS C Reverse Transfer Capacitance 190 rss V = - 10 V, V = - 10 V, I = - 8.4 A 31 47 DS GS D Q Total Gate Charge g 15 23 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 8.4 A 2.8 gs DS GS D Q Gate-Drain Charge 5 gd R Gate Resistance f = 1 MHz 7 g t Turn-On Delay Time 25 40 d(on) t Rise Time V = - 10 V, R = 1.5 50 75 r DD L I - 6.7 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 40 60 d(off) Fall Time t 20 30 f ns t Turn-On Delay Time 10 15 d(on) Rise Time t 10 15 V = - 10 V, R = 1.5 r DD L I - 6.7 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 45 70 d(off) Fall Time t 12 20 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 12 S C A I Pulse Diode Forward Current 30 SM V I = - 6.7 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 35 55 ns rr Q Body Diode Reverse Recovery Charge 21 35 nC rr I = - 6.7 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 12 a ns t Reverse Recovery Rise Time 23 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69512 2 S-80435-Rev. B, 03-Mar-08