SiA430DJ Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET b, c V (V) R () Q (Typ.) I (A) DS DS(on) g D Thermally Enhanced PowerPAK SC-70 Package RoHS a 0.0135 at V = 10 V 12 GS COMPLIANT 20 5.3 nC - Small Footprint Area 0.0185 at V = 4.5 V 10.8 GS Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS Load Switch PowerPAK SC-70-6L-Single D Marking Code 1 D A K X 2 Part code D X X X Lot Traceability 3 and Date code G G D 6 D S 5 Ordering Information: 2.05 mm S SiA430DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) 2.05 mm S 4 SiA430DJ-T4-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 20 DS V V Gate-Source Voltage 20 GS a T = 25 C 12 C a T = 70 C 12 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C 12 A b, c T = 70 C A 10.1 A I Pulsed Drain Current 40 DM a T = 25 C 12 C Continuous Source-Drain Diode Current I b, c S T = 25 C 2.9 A T = 25 C 19.2 C T = 70 C 12.3 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 28 36 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 5.3 6.5 thJC Notes: a. Package limited b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. Document Number: 68685 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-0116-Rev. B, 21-Jan-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiA430DJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V Temperature Coefficient V /T 24 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.6 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 13V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current DSS A V = 20 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V 10 V, I = 7 A 0.0108 0.0135 GS D a R Drain-Source On-State Resistance DS(on) V 4.5 V, I = 5 A 0.0146 0.0185 GS D a g V = 10 V, I = 7 A 16 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 800 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 200 pF oss DS GS C Reverse Transfer Capacitance 90 rss V = 10 V, V = 10 V, I = 12 A 12 18 DS GS D Total Gate Charge Q g 5.3 9 nC Q Gate-Source Charge V = 10 V, V = 4.5 V, I = 12 A 2 gs DS GS D Q Gate-Drain Charge 1.4 gd R Gate Resistance f = 1 MHz 2.5 g t Turn-On Delay Time 16 25 d(on) t Rise Time 10 15 r V = 10 V, R = 1 DD L t Turn-Off Delay Time 15 25 d(off) I 10 A, V = 4.5 V, R = 1 D GEN g Fall Time t 10 15 f ns t Turn-On Delay Time 10 15 d(on) Rise Time t 815 r V = 10 V, R = 1 DD L t Turn-Off Delay Time 17 30 d(off) I 10 A, V = 10 V, R = 1 D GEN g Fall Time t 815 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 12 S C A Pulse Diode Forward Current I 40 SM V I = 5 A, V 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 18 30 ns rr Q Body Diode Reverse Recovery Charge 715 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 8 a ns t Reverse Recovery Rise Time 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 68685 2 S13-0116-Rev. B, 21-Jan-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000