New Product SiA445EDJ Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R () Max. I (A) Q (Typ.) Definition DS DS(on) D g TrenchFET Power MOSFET a 0.0165 at V = - 4.5 V GS - 12 Thermally Enhanced PowerPAK a - 20 0.0185 at V = - 3.7 V 23 nC - 12 GS SC-70 Package a 0.0300 at V = - 2.5 V - Small Footprint Area - 12 GS - Low On-Resistance 100 % R Tested g Built in ESD Protection with Zener Diode PowerPAK SC-70-6L-Single Typical ESD Performance: 2000 V Compliant to RoHS Directive 2002/95/EC 1 APPLICATIONS D 2 Smart Phones, Tablet PCs, Mobile Computing D - Battery Switch 3 - Charger Switch G D - Load Switch 6 S D S 5 Marking Code 2.05 mm S 2.05 mm 4 B Q X Part code X X X G Lot Traceability Ordering Information: and Date code SiA445EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 12 GS a T = 25 C - 12 C a T = 70 C - 12 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 11.8 b, c T = 70 C A - 9.5 A I - 50 Pulsed Drain Current (t = 300 s) DM a T = 25 C C - 12 Continuous Source-Drain Diode Current I S b, c T = 25 C - 2.9 A T = 25 C 19 C T = 70 C 12 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 5 s 28 36 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 5.3 6.5 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. Document Number: 63619 www.vishay.com S11-2525-Rev. A, 26-Dec-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiA445EDJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 13 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.6 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.5 - 1.2 V GS(th) DS GS D V = 0 V, V = 12 V 60 DS GS I Gate-Source Leakage GSS V = 0 V, V = 4.5 V 1 DS GS A V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 7 A 0.0135 0.0165 GS D a R V = - 3.7 V, I = - 5 A 0.0150 0.0185 Drain-Source On-State Resistance DS(on) GS D V = - 2.5 V, I = - 5 A 0.0210 0.0300 GS D a g V = - 10 V, I = - 7 A 29 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2130 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 290 pF oss DS GS C Reverse Transfer Capacitance 280 rss V = - 10 V, V = - 10 V, I = - 12 A Total Gate Charge 48 72 DS GS D Q g 23 35 Gate-Source Charge nC Q V = - 10 V, V = - 4.5 V, I = - 12 A 3.1 gs DS GS D Q Gate-Drain Charge 6.7 gd R Gate Resistance f = 1 MHz 1.2 6 12 g t Turn-On Delay Time 25 50 d(on) Rise Time t 25 50 V = - 10 V, R = 1 r DD L I - 9.5 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 55 110 d(off) Fall Time t 20 40 f ns t Turn-On Delay Time 715 d(on) Rise Time t 10 20 V = - 10 V, R = 1 r DD L I - 9.5 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 60 120 d(off) t Fall Time 17 35 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 12 S C A I Pulse Diode Forward Current - 50 SM V I = - 9.5 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 15 30 ns rr Q Body Diode Reverse Recovery Charge I = - 9.5 A, dI/dt = 100 A/s, 510 nC rr F T = 25 C t Reverse Recovery Fall Time J 7 a ns t Reverse Recovery Rise Time 8 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63619 2 S11-2525-Rev. A, 26-Dec-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000