New Product SiA448DJ Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Max. Q (Typ.) New Thermally Enhanced PowerPAK I (A) DS DS(on) g D SC-70 Package 0.0150 at V = 4.5 V 12 GS - Small Footprint Area 0.0166 at V = 2.5 V 12 GS - Low On-Resistance 20 13 nC 0.0200 at V = 1.8 V 12 GS 100 % R Tested g 0.0324 at V = 1.5 V 12 GS Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 PowerPAK SC-70-6L-Single APPLICATIONS D 1 For Smart Phones and Mobile Marking Code D Computing 2 D A Q X - Load Switches 3 Part code - DC/DC Converters X X X G D 6 G S D Lot Traceability 5 and Date code S 2.05 mm 2.05 mm 4 S N-Channel MOSFET Ordering Information: SiA448DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V 20 Drain-Source Voltage DS V V Gate-Source Voltage 8 GS a T = 25 C C 12 a T = 70 C C 12 a I Continuous Drain Current (T = 150 C) D J a, b, c T = 25 C A 12 b, c T = 70 C A A 9.9 I Pulsed Drain Current (t = 300 s) 30 DM a T = 25 C C 12 Continuous Source-Drain Diode Current I S b, c T = 25 C A 2.9 T = 25 C 19.2 C T = 70 C 12.3 C P Maximum Power Dissipation W D b, c T = 25 C A 3.5 b, c T = 70 C A 2.2 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 28 36 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 5.3 6.5 thJC Notes: a. Package limited b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. Document Number: 63918 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S12-1138-Rev. A, 21-May-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiA448DJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V Temperature Coefficient V /T 21 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.4 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 12 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 12.4 A 0.0125 0.0150 GS D V = 2.5 V, I = 11.8 A 0.0138 0.0166 GS D a R Drain-Source On-State Resistance DS(on) V = 1.8 V, I = 10.8 A 0.0160 0.0200 GS D V = 1.5 V, I = 3 A 0.0180 0.0324 GS D a g V = 10 V, I = 12.4 A 70 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1380 iss C V = 1 V, V = 0 V, f = 1 MHz Output Capacitance 190 pF oss DS GS C Reverse Transfer Capacitance 75 rss V = 10 V, V = 8 V, I = 12.4 A 23 35 DS GS D Q Total Gate Charge g 13 20 nC Q Gate-Source Charge V = 10 V, V = 4.5 V, I = 12.4 A 2.1 gs DS GS D Q Gate-Drain Charge 1.4 gd R Gate Resistance f = 1 MHz 0.6 3.3 6.6 g t Turn-On Delay Time 714 d(on) Rise Time t 10 20 V = 10 V, R = 1 r DD L I 10 A, V = 8 V, R = 1 t Turn-Off Delay Time D GEN g 27 41 d(off) Fall Time t 612 f ns t Turn-On Delay Time 816 d(on) Rise Time t 13 20 V = 10 V, R = 1 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 30 45 d(off) Fall Time t 714 f Drain-Source Body Diode Characteristics c I T = 25 C Continuous Source-Drain Diode Current S C 12 A I Pulse Diode Forward Current 30 SM Body Diode Voltage V I = 10 A, V = 0 V 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 816 ns rr Body Diode Reverse Recovery Charge Q 13 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 4.5 a ns t Reverse Recovery Rise Time 3.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 63918 2 S12-1138-Rev. A, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000