X-On Electronics has gained recognition as a prominent supplier of SIA433EDJ-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIA433EDJ-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIA433EDJ-T1-GE3 Vishay

SIA433EDJ-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SIA433EDJ-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 20 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
Datasheet: SIA433EDJ-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2953 ea
Line Total: USD 885.9 
Availability - 2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
783
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5169
10 : USD 0.4677
25 : USD 0.4655
100 : USD 0.3831
250 : USD 0.3793
500 : USD 0.3001

783
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 26
Multiples : 1
26 : USD 0.3001

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2953
6000 : USD 0.2805
12000 : USD 0.2778
18000 : USD 0.2751
30000 : USD 0.2722

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
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Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the SIA433EDJ-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIA433EDJ-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SIA433EDJ-T1-GE3 with P-Channel 20 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 manufactured by Vishay is a surface-mount single P-Channel transistor designed to provide a wide array of electrical, switching, and power delivery solutions for a range of end products. This transistor features a wide operation range of 20 V, as well as a high drain current of 12 A (Tc) capable of delivering 3.5 W (Ta) and 19 W (Tc). It is equipped with PowerPAK® SC-70-6 packaging, allowing for both easy handling and high performance. Additionally, this device has proven reliability over time and can reliably meet all electrical and environmental requirements.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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