2.05 mm SiA437DJ www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET a V (V) R () (Max.) I (A) Q (Typ.) DS DS(on) D g Thermally enhanced PowerPAK SC-70 package 0.0145 at V = -4.5 V -29.7 GS - Small footprint area 0.0205 at V = -2.5 V -25 GS -20 28 nC 0.0330 at V = -1.8 V -19.7 - Low On-Resistance GS 0.0650 at V = -1.5 V -4 GS 100 % R tested g Material categorization: For definitions of compliance PowerPAK SC-70-6L Single please see www.vishay.com/doc 99912 D D 6 APPLICATIONS S S 5 4 Providing low voltage drop in smart phones, tablet PCs, mobile SSS computing: G - Battery switches 1 - Load switches 2 D 3 D 1 - Power management G D Top View Bottom View P-Channel MOSFET Marking Code: BU Ordering Information: SiA437DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C Parameter Symbol LimitUnit Drain-Source Voltage V -20 DS V Gate-Source Voltage V 8 GS T = 25 C -29.7 C T = 70 C -23.8 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C -12.6 A b, c T = 70 C -10 A A Pulsed Drain Current (t = 300 s) I -60 DM T = 25 C -16 C Continuous Source-Drain Diode Current I S b, c T = 25 C -2.9 A T = 25 C 19 C T = 70 C 12 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A Operating Junction and Storage Temperature Range T , T -50 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, f Maximum Junction-to-Ambient t 5 s R 28 36 thJA C/W 5.3 6.5 Maximum Junction-to-Case (Drain) Steady State R thJC Notes a. T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. S14-0764-Rev. B, 14-Apr-14 Document Number: 62777 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2.05 mmSiA437DJ www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -20 - - V DS GS D V Temperature Coefficient V /T --11 - DS DS J I = -250 A mV/C D V Temperature Coefficient V /T -2.5 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = -250 A -0.4 - -0.9 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage - - 100 nA GSS DS GS V = -20 V, V = 0 V -- -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -20 V, V = 0 V, T = 55 C -- -10 DS GS J a I V -5 V, V = -4.5 V -10 - - A On-State Drain Current D(on) DS GS V = -4.5 V, I = -8 A - 0.0120 0.0145 GS D V = -2.5 V, I = -5 A - 0.0170 0.0205 GS D a R Drain-Source On-State Resistance DS(on) V = -1.8 V, I = -2 A - 0.0250 0.0330 GS D V = -1.5 V, I = -2 A - 0.0370 0.0650 GS D a g V = -10 V, I = -8 A -32- S Forward Transconductance fs GS D b Dynamic Input Capacitance C - 2340 - iss Output Capacitance C V = -10 V, V = 0 V, f = 1 MHz - 305 - pF oss DS GS C Reverse Transfer Capacitance - 270 - rss V = -10 V, V = -8 V, I = -13 A -60 90 DS GS D Total Gate Charge Q g -28 43 nC Q Gate-Source Charge V = -10 V, V = -4.5 V, I = -13 A -4.2 - gs DS GS D Gate-Drain Charge Q -6.8 - gd Gate Resistance R f = 1 MHz 1.6 8 16 g t Turn-On Delay Time -20 40 d(on) t Rise Time -22 45 r V = -10 V, R = 1 DD L I -10 A, V = -4.5 V, R = 1 D GEN g Turn-Off Delay Time t - 100 200 d(off) Fall Time t -37 75 f ns t Turn-On Delay Time -10 20 d(on) Rise Time t -10 20 r V = -10 V, R = 1 DD L I -10 A, V = -8 V, R = 1 Turn-Off Delay Time t D GEN g - 120 240 d(off) t Fall Time -34 70 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C -- -16 S C A I Pulse Diode Forward Current -- -60 SM V I = -10 A, V = 0 V Body Diode Voltage - -0.75 -1.2 V SD S GS Body Diode Reverse Recovery Time t -12 25 ns rr Body Diode Reverse Recovery Charge Q - 4 10 nC rr I = -10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time -7.5 - a ns Reverse Recovery Rise Time t -4.5 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-0764-Rev. B, 14-Apr-14 Document Number: 62777 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000