New Product SiA427ADJ Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R () (Max.) I (A) Q (Typ.) DS DS(on) D g Thermally Enhanced PowerPAK SC-70 Package a 0.016 at V = - 4.5 V - 12 GS - Small Footprint Area a 0.0215 at V = - 2.5 V - 12 - Low On-Resistance GS a 100 % R Tested - 8 0.026 at V = - 1.8 V - 12 30 nC GS g a Material categorization: 0.032 at V = - 1.5 V - 12 GS For definitions of compliance please see 0.095 at V = - 1.2 V - 3 GS www.vishay.com/doc 99912 PowerPAK SC-70-6L-Single APPLICATIONS Load Switch, for 1.2 V Power Line for Portable and 1 D Handheld Devices 2 D S 3 G D Marking Code 6 S G D 5 B T X Part code S 2.05 mm 2.05 mm X X X 4 Lot Traceability and Date code Ordering Information: D SiA427ADJ-T4-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET SiA427ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V Drain-Source Voltage - 8 DS V Gate-Source Voltage V 5 GS a T = 25 C - 12 C a T = 70 C - 12 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C - 12 A b, c T = 70 C A - 9.9 A Pulsed Drain Current (t = 300 s) I - 50 DM a T = 25 C - 12 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 2.9 A T = 25 C 19 C T = 70 C 12 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f Maximum Junction-to-Ambient t 5 s R 28 36 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 5.3 6.5 thJC Notes: a. Package limited b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. Document Number: 63651 www.vishay.com For more information please contact: pmostechsupport vishay.com S12-1141-Rev. B, 21-May-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiA427ADJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 8 V DS GS D V Temperature Coefficient V /T - 5.8 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.4 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.35 - 0.8 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 5 V 100 nA GSS DS GS V = - 8 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 8 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 4.5 V - 10 A D(on) DS GS V = - 4.5 V, I = - 8.2 A 0.013 0.016 GS D V = - 2.5 V, I = - 7.2 A 0.018 0.0215 GS D a Drain-Source On-State Resistance R V = - 1.8 V, I = - 6.6 A 0.021 0.026 DS(on) GS D V = - 1.5 V, I = - 1 A 0.025 0.032 GS D V = - 1.2 V, I = - 1 A 0.037 0.095 GS D a Forward Transconductance g V = - 4 V, I = - 8.2 A 37 S fs DS D b Dynamic Input Capacitance C 2300 iss Output Capacitance C V = - 4 V, V = 0 V, f = 1 MHz 735 pF oss DS GS Reverse Transfer Capacitance C 690 rss V = - 4 V, V = - 5 V, I = - 10 A 33 50 DS GS D Total Gate Charge Q g 30 45 nC Gate-Source Charge Q V = - 4 V, V = - 4.5 V, I = - 10 A 3 gs DS GS D Gate-Drain Charge Q 6.6 gd Gate Resistance R f = 1 MHz 2 9 18 g Turn-On Delay Time t 20 30 d(on) Rise Time t 20 30 r V = - 4 V, R = 0.4 DD L ns I - 9.8 A, V = - 4.5 V, R = 1 70105 Turn-Off Delay Time t D GEN g d(off) Fall Time t 40 60 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 12 S C A Pulse Diode Forward Current I - 50 SM Body Diode Voltage V I = - 9.8 A, V = 0 - 0.8 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 40 80 ns rr Body Diode Reverse Recovery Charge Q 12 25 nC rr I = - 9.8 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 14 a ns Reverse Recovery Rise Time t 26 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63651 For more information please contact: pmostechsupport vishay.com 2 S12-1141-Rev. B, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000