X-On Electronics has gained recognition as a prominent supplier of SIA427ADJ-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIA427ADJ-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIA427ADJ-T1-GE3 Vishay

SIA427ADJ-T1-GE3 electronic component of Vishay
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Part No.SIA427ADJ-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -8V Vds 5V Vgs PowerPAK SC-70
Datasheet: SIA427ADJ-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1716 ea
Line Total: USD 514.8 
Availability - 43650
Ship by Tue. 19 Nov to Mon. 25 Nov
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
50
Ship by Tue. 19 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3562
10 : USD 0.2827
25 : USD 0.2094

43650
Ship by Tue. 19 Nov to Mon. 25 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1716
6000 : USD 0.1716
9000 : USD 0.1716
15000 : USD 0.1716
30000 : USD 0.1716

2807
Ship by Tue. 26 Nov to Fri. 29 Nov
MOQ : 5
Multiples : 5
5 : USD 0.3748
50 : USD 0.2977
150 : USD 0.2649
500 : USD 0.2235
3000 : USD 0.2053
6000 : USD 0.1944

46902
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5049
10 : USD 0.4416
100 : USD 0.3335
500 : USD 0.2691
1000 : USD 0.2139
3000 : USD 0.1966
9000 : USD 0.1794
24000 : USD 0.1771
45000 : USD 0.1737

2910
Ship by Tue. 19 Nov to Mon. 25 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.2137
9000 : USD 0.2109
45000 : USD 0.207

50
Ship by Tue. 19 Nov to Mon. 25 Nov
MOQ : 37
Multiples : 1
37 : USD 0.2094

29100
Ship by Tue. 19 Nov to Mon. 25 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.2241
6000 : USD 0.2075

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Series
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Typical Turn-Off Delay Time
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We are delighted to provide the SIA427ADJ-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIA427ADJ-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product SiA427ADJ Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R () (Max.) I (A) Q (Typ.) DS DS(on) D g Thermally Enhanced PowerPAK SC-70 Package a 0.016 at V = - 4.5 V - 12 GS - Small Footprint Area a 0.0215 at V = - 2.5 V - 12 - Low On-Resistance GS a 100 % R Tested - 8 0.026 at V = - 1.8 V - 12 30 nC GS g a Material categorization: 0.032 at V = - 1.5 V - 12 GS For definitions of compliance please see 0.095 at V = - 1.2 V - 3 GS www.vishay.com/doc 99912 PowerPAK SC-70-6L-Single APPLICATIONS Load Switch, for 1.2 V Power Line for Portable and 1 D Handheld Devices 2 D S 3 G D Marking Code 6 S G D 5 B T X Part code S 2.05 mm 2.05 mm X X X 4 Lot Traceability and Date code Ordering Information: D SiA427ADJ-T4-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET SiA427ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V Drain-Source Voltage - 8 DS V Gate-Source Voltage V 5 GS a T = 25 C - 12 C a T = 70 C - 12 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C - 12 A b, c T = 70 C A - 9.9 A Pulsed Drain Current (t = 300 s) I - 50 DM a T = 25 C - 12 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 2.9 A T = 25 C 19 C T = 70 C 12 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f Maximum Junction-to-Ambient t 5 s R 28 36 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 5.3 6.5 thJC Notes: a. Package limited b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. Document Number: 63651 www.vishay.com For more information please contact: pmostechsupport vishay.com S12-1141-Rev. B, 21-May-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiA427ADJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 8 V DS GS D V Temperature Coefficient V /T - 5.8 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.4 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.35 - 0.8 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 5 V 100 nA GSS DS GS V = - 8 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 8 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 4.5 V - 10 A D(on) DS GS V = - 4.5 V, I = - 8.2 A 0.013 0.016 GS D V = - 2.5 V, I = - 7.2 A 0.018 0.0215 GS D a Drain-Source On-State Resistance R V = - 1.8 V, I = - 6.6 A 0.021 0.026 DS(on) GS D V = - 1.5 V, I = - 1 A 0.025 0.032 GS D V = - 1.2 V, I = - 1 A 0.037 0.095 GS D a Forward Transconductance g V = - 4 V, I = - 8.2 A 37 S fs DS D b Dynamic Input Capacitance C 2300 iss Output Capacitance C V = - 4 V, V = 0 V, f = 1 MHz 735 pF oss DS GS Reverse Transfer Capacitance C 690 rss V = - 4 V, V = - 5 V, I = - 10 A 33 50 DS GS D Total Gate Charge Q g 30 45 nC Gate-Source Charge Q V = - 4 V, V = - 4.5 V, I = - 10 A 3 gs DS GS D Gate-Drain Charge Q 6.6 gd Gate Resistance R f = 1 MHz 2 9 18 g Turn-On Delay Time t 20 30 d(on) Rise Time t 20 30 r V = - 4 V, R = 0.4 DD L ns I - 9.8 A, V = - 4.5 V, R = 1 70105 Turn-Off Delay Time t D GEN g d(off) Fall Time t 40 60 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 12 S C A Pulse Diode Forward Current I - 50 SM Body Diode Voltage V I = - 9.8 A, V = 0 - 0.8 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 40 80 ns rr Body Diode Reverse Recovery Charge Q 12 25 nC rr I = - 9.8 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 14 a ns Reverse Recovery Rise Time t 26 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63651 For more information please contact: pmostechsupport vishay.com 2 S12-1141-Rev. B, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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