2.05 mm2.05 mm SiA537EDJ www.vishay.com Vishay Siliconix N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Typical ESD protection: N-channel 2400 V a 0.028 at V = 4.5 V 4.5 GS P-channel 2000 V a N-Channel 12 0.033 at V = 2.5 V 4.5 6.2 nC GS 100 % R tested g a 0.042 at V = 1.8 V 4.5 GS Material categorization: For definitions of a 0.054 at V = -4.5 V -4.5 GS compliance please see www.vishay.com/doc 99912 a 0.070 at V = -2.5 V -4.5 GS P-Channel -20 9.5 nC a APPLICATIONS 0.104 at V = -1.8 V -4.5 GS 0.165 at V = -1.5 V -1.5 Portable devices such as smart phones, tablet PCs and GS mobile computing - Load switches PowerPAK SC-70-6L Dual - Power management D 1 - DC/DC converters G 6 2 S 5 2 4 D S 1 2 D 1 D 2 1 G 1 2 S 1 3 G G 1 2 111 D 2 Top View Bottom View Marking Code: EK D S 2 1 Ordering Information: P-Channel MOSFET N-Channel MOSFET SiA537EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL N-CHANNELP-CHANNELUNIT Drain-Source Voltage V 12 -20 DS V Gate-Source Voltage V 8 GS a a T = 25 C 4.5 -4.5 C a a T = 70 C 4.5 -4.5 C Continuous Drain Current (T = 150 C) I J D a,b,c a,b,c T = 25 C 4.5 -4.5 A a,b,c a,b,c T = 70 C 4.5 -4.5 A A Pulsed Drain Current (t = 100 s) I 20 -15 DM a a T = 25 C 4.5 -4.5 C Source Drain Current Diode Current I S b,c b,c T = 25 C 1.6 -1.6 A T = 25 C 7.8 7.8 C T = 70 C 5 5 C Maximum Power Dissipation P W D b,c b,c T = 25 C 1.9 1.9 A b,c b,c T = 70 C 1.2 1.2 A Operating Junction and Storage Temperature Range T , T -55 to 150 J stg C d,e Soldering Recommendations (Peak Temperature) 260 S13-2635-Rev. A, 30-Dec-13 Document Number: 62934 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 22.05 mm20055 mmSiA537EDJ www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS N-CHANNEL P-CHANNEL PARAMETER SYMBOL UNIT TYP. MAX. TYP. MAX. b,f Maximum Junction-to-Ambient t 5 s R 52 65 52 65 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 12.5 16 12.5 16 thJC Notes a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.MAX.UNIT Static V = 0 V, I = 250 A GS D N-Ch 12 - - Drain-Source Breakdown Voltage V V DS V = 0 V, I = -250 A P-Ch -20 - - GS D I = 250 A D N-Ch - 8 - V Temperature Coefficient V /T DS DS J I = -250 A P-Ch - -15 - D mV/C I = 250 A D N-Ch - -2.5 - V Temperature Coefficient V /T GS(th) GS(th) J I = -250 A P-Ch - 2.5 - D V = V , I = 250 A DS GS D N-Ch 0.4 - 1 Gate Threshold Voltage V V GS(th) V = V , I = -250 A P-Ch -0.4 - -1 DS GS D N-Ch - - 0.5 V = 0 V, V = 4.5 V DS GS P-Ch - - 3 Gate-Source Leakage I GSS N-Ch - - 5 V = 0 V, V = 8 V DS GS P-Ch - - 30 A V = 12 V, V = 0 V DS GS N-Ch - - 1 V = -20 V, V = 0 V P-Ch - - -1 DS GS Zero Gate Voltage Drain Current I DSS V = 12 V, V = 0 V, T = 55 C DS GS J N-Ch - - 10 V = -20 V, V = 0 V, T = 55 C P-Ch - - -10 DS GS J V 5 V, V = 4.5 V DS GS N-Ch 10 - - b On-State Drain Current I A D(on) V -5 V, V = -4.5 V P-Ch -10 - - DS GS V = 4.5 V, I = 5.2 A GS D N-Ch - 0.023 0.028 V = -4.5 V, I = -3.8 A P-Ch - 0.044 0.054 GS D V = 2.5 V, I = 4.8 A GS D N-Ch - 0.027 0.033 b Drain-Source On-State Resistance R V = -2.5 V, I = -3.3 A P-Ch - 0.057 0.070 GS D DS(on) V = 1.8 V, I = 2.5 A GS D N-Ch - 0.035 0.042 V = -1.8 V, I = -1 A P-Ch - 0.075 0.104 GS D V = -1.5 V, I = -0.5 A GS D P-Ch - 0.097 0.165 V = 6 V, I = 5.2 A N-Ch - 23 - DS D b Forward Transconductance g S fs V = -6 V, I = -3.6 A DS D P-Ch - 11 - S13-2635-Rev. A, 30-Dec-13 Document Number: 62934 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000